发明申请
- 专利标题: FABRICATION METHOD OF LITHOGRAPHY MASK AND FORMATION METHOD OF FINE PATTERN USING THE SAME
- 专利标题(中): 使用其的精细图案的制作方法和形成方法
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申请号: US12333566申请日: 2008-12-12
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公开(公告)号: US20100015535A1公开(公告)日: 2010-01-21
- 发明人: Ho Young Song , Dong You Kim , Won Ho Jung , Young Jin Cho , Young Chun Kim
- 申请人: Ho Young Song , Dong You Kim , Won Ho Jung , Young Jin Cho , Young Chun Kim
- 申请人地址: KR Suwon
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon
- 优先权: KR10-2008-0069184 20080716
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; G03F7/20
摘要:
There is provided a method of fabricating a lithography mask, the method including: forming a transparent polymer layer on a surface of a first substrate where a convex-concave pattern is formed; separating the transparent polymer layer from the first substrate, the transparent polymer layer having a convex-concave surface formed by the convex-concave pattern of the first substrate transferred thereonto; depositing a metal thin film on the convex-concave surface; forming a viscous film on a second substrate; disposing the transparent polymer layer on the second substrate such that the viscous film and metal thin film are partially bonded together; and separating the transparent polymer layer from the second substrate such that a portion of the metal thin film bonded to the viscous film is removed, wherein a metal thin film pattern having the portion of the metal thin film removed therefrom is formed on the convex-concave surface.
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