发明申请
US20100015535A1 FABRICATION METHOD OF LITHOGRAPHY MASK AND FORMATION METHOD OF FINE PATTERN USING THE SAME 有权
使用其的精细图案的制作方法和形成方法

FABRICATION METHOD OF LITHOGRAPHY MASK AND FORMATION METHOD OF FINE PATTERN USING THE SAME
摘要:
There is provided a method of fabricating a lithography mask, the method including: forming a transparent polymer layer on a surface of a first substrate where a convex-concave pattern is formed; separating the transparent polymer layer from the first substrate, the transparent polymer layer having a convex-concave surface formed by the convex-concave pattern of the first substrate transferred thereonto; depositing a metal thin film on the convex-concave surface; forming a viscous film on a second substrate; disposing the transparent polymer layer on the second substrate such that the viscous film and metal thin film are partially bonded together; and separating the transparent polymer layer from the second substrate such that a portion of the metal thin film bonded to the viscous film is removed, wherein a metal thin film pattern having the portion of the metal thin film removed therefrom is formed on the convex-concave surface.
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