发明申请
- 专利标题： Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
- 专利标题（中）： 减少用于复位相变存储器件和相变存储器件的存储单元中的相变材料的一部分的复位电流的方法
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申请号： US12585637申请日： 2009-09-21
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公开(公告)号： US20100015785A1公开(公告)日： 2010-01-21
- 发明人: Chang-Wook Jeong , Jun-Hyok Kong , Ji-Hye Yi , Beak-Hyung Cho
- 申请人： Chang-Wook Jeong , Jun-Hyok Kong , Ji-Hye Yi , Beak-Hyung Cho
- 优先权： KR2003-62546 20030908
- 主分类号： H01L21/479
- IPC分类号： H01L21/479
摘要：
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example, the first crystalline phase may be a hexagonal closed packed structure, and the first crystalline phase may be a face centered cubic structure.
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