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    Semiconductor memory devices having strapping contacts
    1.
    发明授权
    Semiconductor memory devices having strapping contacts 有权
    具有捆扎触点的半导体存储器件

    公开(公告)号：US08791448B2

    公开(公告)日：2014-07-29

    申请号：US13630505

    申请日：2012-09-28

    申请人： Jung-in Kim ,  Jae-hee Oh ,  Jun-hyok Kong ,  Sung-ho Eun ,  Yong-tae Oh

    发明人： Jung-in Kim ,  Jae-hee Oh ,  Jun-hyok Kong ,  Sung-ho Eun ,  Yong-tae Oh

    IPC分类号： H01L45/00 ,  H01L23/48

    CPC分类号： H01L45/06 ,  G11C5/06 ,  G11C8/10 ,  G11C11/16 ,  G11C13/0004 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor memory devices having strapping contacts are provided, the devices include cell regions and strapping regions between adjacent cell regions in a first direction. Active patterns, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in a second direction intersecting the first direction. First interconnection lines, extending in the first direction throughout the cell regions and strapping regions, are spaced apart from one another in the second direction while overlapping with the active patterns. Second interconnection lines, extending in the second direction, intersect the active patterns and first interconnection lines in the cell regions. The second interconnection lines are spaced apart from one another in the first direction. Memory cells are positioned at intersection portions of the first and second interconnection lines in the cell regions. The active patterns contact the first interconnection lines through strapping contacts in the strapping regions.

    摘要翻译： 提供了具有捆扎触点的半导体存储器件，器件包括在第一方向上的相邻单元区域之间的单元区域和绑带区域。 在整个单元区域和捆扎区域中沿着第一方向延伸的活动图案在与第一方向相交的第二方向上彼此间隔开。 在整个单元区域和捆扎区域沿第一方向延伸的第一互连线在第二方向上彼此间隔开，同时与有源图案重叠。 沿第二方向延伸的第二互连线与单元区域中的有源图案和第一互连线相交。 第二互连线在第一方向上彼此间隔开。 存储单元位于单元区域中的第一和第二互连线的交叉部分处。 有源图案通过捆扎区域中的捆扎触点接触第一互连线。

    ONE-TIME PROGRAMMABLE DEVICES INCLUDING CHALCOGENIDE MATERIAL AND ELECTRONIC SYSTEMS INCLUDING THE SAME
    2.
    发明申请
    ONE-TIME PROGRAMMABLE DEVICES INCLUDING CHALCOGENIDE MATERIAL AND ELECTRONIC SYSTEMS INCLUDING THE SAME 有权
    一次性可编程器件，包括合成材料和包括其中的电子系统

    公开(公告)号：US20100090213A1

    公开(公告)日：2010-04-15

    申请号：US12638599

    申请日：2009-12-15

    申请人： Chang-Wook Jeong ,  Jun-Hyok Kong ,  Hyung-Rok Oh

    发明人： Chang-Wook Jeong ,  Jun-Hyok Kong ,  Hyung-Rok Oh

    IPC分类号： H01L29/18

    CPC分类号： G11C17/16 ,  G11C13/0004 ,  G11C17/165

    摘要： A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes. Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.

    摘要翻译： 提供了一种编程一次性可编程器件的方法。 设置在基板中的开关装置导通，并且将编程电流施加到与开关装置电连接的保险丝，从而切断保险丝。 保险丝包括电连接到开关装置的第一电极，与第一电极间隔开的第二电极和设置在第一和第二电极之间的硫族化物图案。 还公开了相关的一次性可编程器件，相变存储器件和电子系统。

    Semiconductor memory devices having strapping contacts
    3.
    发明申请
    Semiconductor memory devices having strapping contacts 审中-公开
    具有捆扎触点的半导体存储器件

    公开(公告)号：US20080239783A1

    公开(公告)日：2008-10-02

    申请号：US12073661

    申请日：2008-03-07

    申请人： Jung-in Kim ,  Jae-hee Oh ,  Jun-hyok Kong ,  Sung-ho Eun ,  Yong-tae Oh

    发明人： Jung-in Kim ,  Jae-hee Oh ,  Jun-hyok Kong ,  Sung-ho Eun ,  Yong-tae Oh

    IPC分类号： G11C5/06

    CPC分类号： H01L45/06 ,  G11C5/06 ,  G11C8/10 ,  G11C11/16 ,  G11C13/0004 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor memory devices having strapping contacts with an increased pitch are provided. The semiconductor memory devices include cell regions and strapping regions between adjacent cell regions in a first direction on a semiconductor substrate. Active patterns extend in the first direction throughout the cell regions and strapping regions and are spaced apart from one another in a second direction intersecting the first direction. First interconnection lines extend in the first direction throughout the cell regions and the strapping regions and are spaced apart from one another in the second direction while overlapping with the active patterns. Second interconnection lines extend in the second direction to intersect the active patterns and the first interconnection lines in the cell regions. The second interconnection lines are spaced apart from one another in the first direction. Memory cells are positioned at intersection portions of the first and second interconnection lines in the cell regions. Strapping contacts are in the strapping regions and configured such that the active patterns contact with the first interconnection lines through the strapping contacts.

    摘要翻译： 提供了具有增加的间距的具有捆扎触头的半导体存储器件。 半导体存储器件包括半导体衬底上的第一方向上的相邻单元区域之间的单元区域和绑带区域。 有源图案在整个单元区域和捆扎区域中沿第一方向延伸，并且在与第一方向相交的第二方向上彼此间隔开。 第一互连线在整个单元区域和捆扎区域的第一方向上延伸，并且在与活动图案重叠的同时在第二方向上彼此间隔开。 第二互连线在第二方向上延伸以与单元区域中的有源图案和第一互连线相交。 第二互连线在第一方向上彼此间隔开。 存储单元位于单元区域中的第一和第二互连线的交叉部分处。 绑带触点在捆扎区域中并且被配置成使得有源图案通过捆扎接触件与第一互连线接触。

    Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide Layers
    4.
    发明申请
    Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide Layers 审中-公开
    包括阻挡层和金属硅化物层的相变型随机存取存储器件

    公开(公告)号：US20100181549A1

    公开(公告)日：2010-07-22

    申请号：US12687276

    申请日：2010-01-14

    申请人： Song-Yi Kim ,  Heung-Jin Joo ,  Dae-Hwan Kang ,  Ji-Hyun Jeong ,  Jun-Hyok Kong

    发明人： Song-Yi Kim ,  Heung-Jin Joo ,  Dae-Hwan Kang ,  Ji-Hyun Jeong ,  Jun-Hyok Kong

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1625 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144

    摘要： A PRAM device may include an insulating interlayer, a diode, a metal silicide layer, a barrier spacer, an outer spacer, a lower electrode, a phase-changeable layer and an upper electrode. The insulating interlayer may be formed on a substrate. The insulating interlayer may have a contact hole. The diode may be formed in the contact hole. The metal silicide layer may be formed on the diode. The barrier spacer may be formed on an upper surface of the metal silicide layer and a side surface of the contact hole. The outer spacer may be formed on the barrier spacer. The lower electrode may be formed on the barrier spacer. The phase-changeable layer may be formed on the lower electrode. The upper electrode may be formed on the phase-changeable layer.

    摘要翻译： PRAM器件可以包括绝缘中间层，二极管，金属硅化物层，隔离隔离物，外隔离物，下电极，相变层和上电极。 绝缘中间层可以形成在基板上。 绝缘中间层可以具有接触孔。 二极管可以形成在接触孔中。 金属硅化物层可以形成在二极管上。 隔离间隔物可以形成在金属硅化物层的上表面和接触孔的侧表面上。 外隔离物可以形成在隔离隔离物上。 下电极可以形成在阻挡间隔物上。 相变层可以形成在下电极上。 上电极可以形成在相变层上。

    Methods of programming one-time programmable devices including chalcogenide material
    5.
    发明授权
    Methods of programming one-time programmable devices including chalcogenide material 有权
    编程一次性可编程器件（包括硫族化物材料）的方法

    公开(公告)号：US07656694B2

    公开(公告)日：2010-02-02

    申请号：US11564751

    申请日：2006-11-29

    申请人： Chang-Wook Jeong ,  Jun-Hyok Kong ,  Hyung-Rok Oh

    发明人： Chang-Wook Jeong ,  Jun-Hyok Kong ,  Hyung-Rok Oh

    IPC分类号： G11C17/00

    CPC分类号： G11C17/16 ,  G11C13/0004 ,  G11C17/165

    摘要： A method of programming a one-time programmable device is provided. A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to the switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes. Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.

    摘要翻译： 提供了一种编程一次性可编程器件的方法。 设置在基板中的开关装置导通，并且将编程电流施加到与开关装置电连接的保险丝，从而切断保险丝。 保险丝包括电连接到开关装置的第一电极，与第一电极间隔开的第二电极和设置在第一和第二电极之间的硫族化物图案。 还公开了相关的一次性可编程器件，相变存储器件和电子系统。

    One-time programmable devices including chalcogenide material and electronic systems including the same
    7.
    发明授权
    One-time programmable devices including chalcogenide material and electronic systems including the same 有权
    一次性可编程器件包括硫族化物材料和包括其的电子系统

    公开(公告)号：US07974115B2

    公开(公告)日：2011-07-05

    申请号：US12638599

    申请日：2009-12-15

    申请人： Chang-Wook Jeong ,  Jun-Hyok Kong ,  Hyung-Rok Oh

    发明人： Chang-Wook Jeong ,  Jun-Hyok Kong ,  Hyung-Rok Oh

    IPC分类号： G11C17/00

    CPC分类号： G11C17/16 ,  G11C13/0004 ,  G11C17/165

    摘要： A switching device disposed in a substrate is turned on and a program current is applied to a fuse electrically connected to a switching device, thereby cutting the fuse. The fuse includes a first electrode electrically connected to the switching device, a second electrode spaced apart from the first electrode, and a chalcogenide pattern disposed between the first and second electrodes.

    摘要翻译： 设置在基板中的开关装置导通，并且将编程电流施加到与开关装置电连接的保险丝，从而切断熔丝。 保险丝包括电连接到开关装置的第一电极，与第一电极间隔开的第二电极和设置在第一和第二电极之间的硫族化物图案。