发明申请
US20100015815A1 PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM
失效
等离子体氧化方法，等离子体处理装置和储存介质
- 专利标题： PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM
- 专利标题（中）： 等离子体氧化方法，等离子体处理装置和储存介质
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申请号： US12443589申请日： 2007-09-27
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公开(公告)号： US20100015815A1公开(公告)日： 2010-01-21
- 发明人: Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
- 申请人： Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2006-267744 20060929; JP2007-091701 20070330
- 国际申请： PCT/JP2007/068755 WO 20070927
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.