发明申请
- 专利标题： SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING WARPING IN A WAFER STATE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 能够在波浪状态下抑制加热的半导体器件及其制造方法
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申请号： US12507188申请日： 2009-07-22
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公开(公告)号： US20100019371A1公开(公告)日： 2010-01-28
- 发明人: Junji SHIOTA , Talsuke Koroku , Nobumitsu Fujii , Osamu Kuwabara , Osamu Okada
- 申请人： Junji SHIOTA , Talsuke Koroku , Nobumitsu Fujii , Osamu Kuwabara , Osamu Okada
- 申请人地址： JP Tokyo
- 专利权人： Casio Computer Co., Ltd.
- 当前专利权人： Casio Computer Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-190440 20080724
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/78
摘要：
In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.
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