公开(公告)号：US20100019371A1

公开(公告)日：2010-01-28

申请号：US12507188

申请日：2009-07-22

申请人： Junji SHIOTA ,  Talsuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

发明人： Junji SHIOTA ,  Talsuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

IPC分类号： H01L23/48 ,  H01L21/78

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02331 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014

摘要： In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

摘要翻译： 在这种半导体装置的制造方法中，在半导体晶片的整个表面上施加了密封膜并硬化后，在密封膜中形成用于形成侧部保护膜的第二沟槽，并且在顶部表面侧 半导体晶片。 换句话说，密封膜形成为在半导体晶片的顶面侧未形成导致强度降低的槽的状态。 由于在形成密封膜之后在半导体晶片的顶表面侧形成第二凹槽，所以当由液体树脂制成的密封膜硬化时，半导体晶片不太可能翘曲。