发明申请
US20100025695A1 ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
审中-公开
具有碳化硅基板和半导体器件的半导体器件的退火方法
- 专利标题： ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 具有碳化硅基板和半导体器件的半导体器件的退火方法
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申请号： US11813621申请日： 2007-04-20
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公开(公告)号： US20100025695A1公开(公告)日： 2010-02-04
- 发明人: Masami Shibagaki , Akihiro Egami
- 申请人： Masami Shibagaki , Akihiro Egami
- 申请人地址： JP JP Tokyo
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP JP Tokyo
- 国际申请： PCT/JP2007/059132 WO 20070420
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/24
摘要：
In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of H2O to be not larger than 10−2 Pa, preferably not larger than 10−3 Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.
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