发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件的半导体器件和制造方法
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申请号： US12533492申请日： 2009-07-31
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公开(公告)号： US20100025860A1公开(公告)日： 2010-02-04
- 发明人: Kazumasa Tanida , Mie Matsuo , Masahiro Sekiguchi , Chiaki Takubo
- 申请人： Kazumasa Tanida , Mie Matsuo , Masahiro Sekiguchi , Chiaki Takubo
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-197206 20080731
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768
摘要：
In one aspect of the present invention, a semiconductor device, may include a semiconductor substrate having a first surface and a second surface opposite to the first surface; a through hole in the semiconductor substrate, including an expansion portion which is provided in a vicinity of the first surface so that an opening area of the first opening is greater than an opening area of a lowermost portion of the expansion portion; a first insulating layer on the first surface of the semiconductor substrate; a first wiring layer on the first insulating layer to close the opening of the first insulating layer; a second insulating layer provided on the expansion portion of the through hole; and a second wiring layer on the second insulating layer to extend from inside of the through hole to the second surface of the semiconductor substrate.
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