发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 半导体存储器件
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申请号： US12510745申请日： 2009-07-28
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公开(公告)号： US20100027344A1公开(公告)日： 2010-02-04
- 发明人: Reiji MOCHIDA , Yasuhiro TOMITA , Kazuyuki KOUNO , Hoshihide HARUYAMA , Masayoshi NAKAYAMA
- 申请人： Reiji MOCHIDA , Yasuhiro TOMITA , Kazuyuki KOUNO , Hoshihide HARUYAMA , Masayoshi NAKAYAMA
- 优先权： JP2008-197901 20080731; JP2009-133276 20090602
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C7/00 ; G11C5/14
摘要：
A drain voltage generator circuit includes a first switching element coupled between a first power supply voltage and an output end of the drain voltage generator circuit, a second switching element coupled in parallel to the first switching element and having a smaller current capability than that of the first switching element, and a control circuit for turning ON the second switching element and then the first switching element, and generates a voltage to supply to a drain of a memory cell. A source of the memory cell is set to be floated or grounded by a transistor.
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