发明申请
- 专利标题： Semiconductor device and method of making the same
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12461205申请日： 2009-08-04
-
公开(公告)号： US20100032730A1公开(公告)日： 2010-02-11
- 发明人: Takeshi Endo , Eiichi Okuno , Takeo Yamamoto , Hirokazu Fujiwara , Masaki Konishi , Yukihiko Watanabe , Takashi Katsuno
- 申请人： Takeshi Endo , Eiichi Okuno , Takeo Yamamoto , Hirokazu Fujiwara , Masaki Konishi , Yukihiko Watanabe , Takashi Katsuno
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2008-201495 20080805; JP2008-317497 20081212
- 主分类号： H01L29/812
- IPC分类号： H01L29/812 ; H01L21/338
摘要：
A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.
公开/授权文献
- US08168485B2 Semiconductor device making method 公开/授权日：2012-05-01
信息查询
IPC分类:
