Invention Application
US20100034019A1 SYSTEMS AND METHODS FOR PERFORMING A PROGRAM-VERIFY PROCESS ON A NONVOLATILE MEMORY BY SELECTIVELY PRE-CHARGING BIT LINES ASSOCIATED WITH MEMORY CELLS DURING THE VERIFY OPERATIONS
有权
通过在验证操作期间与存储器细胞相关的选择性预充电位线来执行非易失性存储器的程序验证过程的系统和方法
- Patent Title: SYSTEMS AND METHODS FOR PERFORMING A PROGRAM-VERIFY PROCESS ON A NONVOLATILE MEMORY BY SELECTIVELY PRE-CHARGING BIT LINES ASSOCIATED WITH MEMORY CELLS DURING THE VERIFY OPERATIONS
- Patent Title (中): 通过在验证操作期间与存储器细胞相关的选择性预充电位线来执行非易失性存储器的程序验证过程的系统和方法
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Application No.: US12533720Application Date: 2009-07-31
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Publication No.: US20100034019A1Publication Date: 2010-02-11
- Inventor: Sang-Gu Kang , Hee-won Lee , Ju Seok Lee , Jung-Ho Song
- Applicant: Sang-Gu Kang , Hee-won Lee , Ju Seok Lee , Jung-Ho Song
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR2008-77033 20080806
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06
Abstract:
A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.
Public/Granted literature
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