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公开(公告)号：US20160124809A1
公开(公告)日：2016-05-05
申请号：US14925077
申请日：2015-10-28
申请人： Ju Seok LEE
发明人： Ju Seok LEE
CPC分类号： G11C29/52 , G06F11/108 , G11C16/3418 , G11C29/42 , G11C2029/0411
摘要： An operating method of a storage device includes simultaneously buffering first data in a first nonvolatile memory device and a second nonvolatile memory device, simultaneously buffering second data in the second nonvolatile memory device and a third nonvolatile memory device, performing a parity operation on the first data and the second data in the second nonvolatile memory device to generate a parity, and programming the first data, the second data, and the parity into the first nonvolatile memory device, the third nonvolatile memory device, and the second nonvolatile memory device, respectively.
摘要翻译： 存储装置的操作方法包括同时缓冲第一非易失性存储器件和第二非易失性存储器件中的第一数据，同时缓冲第二非易失性存储器件中的第二数据和第三非易失性存储器件，对第一数据执行奇偶校验操作 以及第二非易失性存储器件中的第二数据以产生奇偶校验，并将第一数据，第二数据和奇偶校验分别编程到第一非易失性存储器件，第三非易失性存储器件和第二非易失性存储器件中。
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2.发明授权Nonvolatile memory device, memory system comprising same, and method of operating same 有权非易失性存储器件，包括其的存储器系统及其操作方法公开(公告)号：US08861276B2
公开(公告)日：2014-10-14
申请号：US13527641
申请日：2012-06-20
申请人： Dongkyo Shim , Jaeyong Jeong , Ju Seok Lee , Ohsuk Kwon , Kitae Park , Hyunjun Yoon
发明人： Dongkyo Shim , Jaeyong Jeong , Ju Seok Lee , Ohsuk Kwon , Kitae Park , Hyunjun Yoon
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483
摘要： A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.
摘要翻译： 一种操作非易失性存储器件的方法包括从存储器控制器接收读取命令，确定非易失性存储器件的读取模式，基于读取模式选择读取电压，以及对所选择的页面的存储器单元执行读取操作 使用所选择的读取电压的非易失性存储器件。
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公开(公告)号：US08665647B2
公开(公告)日：2014-03-04
申请号：US13302573
申请日：2011-11-22
申请人： Ju Seok Lee , Jae Yong Jeong , Seung Bum Kim
发明人： Ju Seok Lee , Jae Yong Jeong , Seung Bum Kim
IPC分类号： G11C11/34
CPC分类号： G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/3418
摘要： A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.
摘要翻译： 非易失性存储器件执行用于补偿由于相邻存储单元的耦合的读取操作。 利用非易失性存储器件的读取操作，基于与所选择的存储器单元相邻的相邻存储器单元的编程状态来补偿包括在所选存储单元的读取结果中的耦合效应。 为此，在选择的存储单元被读取之前，选择性地执行相邻存储单元的读取操作。 在感测到来自所选择的存储单元的数据时，根据相邻存储单元的编程状态，根据相邻存储单元的编程状态，读取电压变化，执行所选存储单元的一个或多个读操作 。
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4.发明申请NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING SAME, AND METHOD OF OPERATING SAME 有权非易失性存储器件，包含其的存储器系统及其操作方法公开(公告)号：US20120327711A1
公开(公告)日：2012-12-27
申请号：US13527641
申请日：2012-06-20
申请人： DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
发明人： DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483
摘要： A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.
摘要翻译： 一种操作非易失性存储器件的方法包括从存储器控制器接收读取命令，确定非易失性存储器件的读取模式，基于读取模式选择读取电压，以及对所选择的页面的存储器单元执行读取操作 使用所选择的读取电压的非易失性存储器件。
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公开(公告)号：US20120134208A1
公开(公告)日：2012-05-31
申请号：US13302573
申请日：2011-11-22
申请人： Ju Seok Lee , Jae Yong Jeong , Seung Bum Kim
发明人： Ju Seok Lee , Jae Yong Jeong , Seung Bum Kim
IPC分类号： G11C16/26
CPC分类号： G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/3418
摘要： A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.
摘要翻译： 非易失性存储器件执行用于补偿由于相邻存储单元的耦合的读取操作。 利用非易失性存储器件的读取操作，基于与所选择的存储器单元相邻的相邻存储器单元的编程状态来补偿包括在所选存储单元的读取结果中的耦合效应。 为此，在选择的存储单元被读取之前，选择性地执行相邻存储单元的读取操作。 在感测到来自所选择的存储单元的数据时，根据相邻存储单元的编程状态，根据相邻存储单元的编程状态，读取电压变化，执行所选存储单元的一个或多个读操作 。
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6.发明申请METHOD AND APPARATUS FOR CHECKING INSULATION OF POUCH ELECTRIC CELL AND PROBE FOR THE SAME 有权检测电极电极绝缘的方法和装置及其相关探针公开(公告)号：US20120019256A1
公开(公告)日：2012-01-26
申请号：US13123822
申请日：2009-10-12
申请人： Ju-Seok Lee , Hey-Woong Park , Ju-Young Kim , John E. Namgoong
发明人： Ju-Seok Lee , Hey-Woong Park , Ju-Young Kim , John E. Namgoong
IPC分类号： G01N27/416
CPC分类号： G01R1/06788 , G01R31/1263 , G01R31/3627
摘要： To check insulation of a pouch electric cell, probes are contacted to an electrode of a pouch electric cell and an aluminum layer of a pouch of the pouch electric cell, respectively, and then an electric characteristic value between the probes is measured. The probe contacted with the aluminum layer has a contact portion made of conductive elastic material. Also, insulation of the pouch electric cell is determined by comparing the measured electric characteristic value with a reference value. Thus, physical characteristics of an outer periphery of a flexible pouch may be sufficiently exhibited in measuring or checking insulation of a pouch electric cell such as insulation resistance, thereby improving reliability of electric contact and minimizing physical damage or deformation of the pouch electric cell.
摘要翻译： 为了检查袋电池的绝缘，将探针分别与袋电池的电极和袋电池的袋的铝层接触，然后测量探针之间的电特性值。 与铝层接触的探针具有由导电弹性材料制成的接触部分。 此外，通过将测量的电特性值与参考值进行比较来确定袋电池的绝缘。 因此，可以在测量或检查诸如绝缘电阻的袋电池的绝缘性方面充分发挥柔性袋的外周的物理特性，从而提高电接触的可靠性并使袋电池的物理损坏或变形最小化。
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公开(公告)号：USD958457S1
公开(公告)日：2022-07-19
申请号：US29750047
申请日：2020-09-10
申请人： Benjamin S Avery , Anton Fahlgren , Ju Seok Lee , Fred Simon
设计人： Benjamin S Avery , Anton Fahlgren , Ju Seok Lee , Fred Simon
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公开(公告)号：US08976595B2
公开(公告)日：2015-03-10
申请号：US13526794
申请日：2012-06-19
申请人： Jaeyong Jeong , Ju Seok Lee
发明人： Jaeyong Jeong , Ju Seok Lee
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/24 , G11C16/3454
摘要： A nonvolatile memory device comprises a cell array connected to a plurality of bit lines in an all bit line structure, a page buffer circuit connected to the plurality of bit lines, and control logic configured to control the page buffer circuit. The control logic controls the page buffer circuit to sense memory cells corresponding to both even-numbered and odd-numbered columns of a selected page in a first read mode and to sense memory cells corresponding to one of the even-numbered and odd-numbered columns of the selected page in a second read mode. A sensing operation is performed at least twice in the first read mode and once in the second read mode.
摘要翻译： 非易失性存储器件包括连接到全位线结构中的多个位线的单元阵列，连接到多个位线的寻址缓冲器电路以及被配置为控制页缓冲器电路的控制逻辑。 控制逻辑控制页面缓冲电路以在第一读取模式中感测与选定页面的偶数和偶数列对应的存储器单元，并且读取对应于偶数和奇数列之一的存储器单元 的第二读取模式。 在第一读取模式下执行感测操作至少两次，并且在第二读取模式中执行一次感测操作。
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9.发明授权Contact pad for sensing voltage of cell module assembly and cell module assembly 有权用于感测电池模块组件和电池模块组装电压的接触垫公开(公告)号：US08889278B2
公开(公告)日：2014-11-18
申请号：US12667740
申请日：2009-07-22
申请人： Ju-Seok Lee , Jin-Kyu Shin , John E. NamGoong
发明人： Ju-Seok Lee , Jin-Kyu Shin , John E. NamGoong
IPC分类号： H01M10/48 , G01N27/42 , G01N27/416 , H01M2/20 , H01M4/66
摘要： A contact pad configured to sense the voltage of a cell module assembly including at least one battery cell, is electrically connected to a voltage sensing module for measuring the voltage of the battery cell in the cell module assembly and electrically contacted with an electrode of the battery cell, and is made of a conductive organic elastomer, thereby improving reliability of electrical contact with each battery cell, and effectively preventing malfunction of the cell module assembly caused by impurities, external physical shocks and so on.
摘要翻译： 被配置为感测包括至少一个电池单元的电池模块组件的电压的接触焊盘电连接到电压感测模块，用于测量电池模块组件中的电池单元的电压并与电池的电极电接触 并且由导电有机弹性体制成，从而提高与每个电池单元的电接触的可靠性，并且有效地防止由杂质，外部物理冲击等引起的电池模块组件的故障。
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10.发明申请CONTACT PAD FOR SENSING VOLTAGE OF CELL MODULE ASSEMBLY AND CELL MODULE ASSEMBLY 有权用于感应电池模块组件和电池模块组件的接触垫公开(公告)号：US20110223453A1
公开(公告)日：2011-09-15
申请号：US12667740
申请日：2009-07-22
申请人： Ju-Seok Lee , Jin-Kyu Shin , John E. NamGoong
发明人： Ju-Seok Lee , Jin-Kyu Shin , John E. NamGoong
IPC分类号： H01M10/48
摘要： A contact pad configured to sense the voltage of a cell module assembly including at least one battery cell, is electrically connected to a voltage sensing module for measuring the voltage of the battery cell in the cell module assembly and electrically contacted with an electrode of the battery cell, and is made of a conductive organic elastomer, thereby improving reliability of electrical contact with each battery cell, and effectively preventing malfunction of the cell module assembly caused by impurities, external physical shocks and so on.
摘要翻译： 被配置为感测包括至少一个电池单元的电池模块组件的电压的接触焊盘电连接到电压感测模块，用于测量电池模块组件中的电池单元的电压并与电池的电极电接触 并且由导电有机弹性体制成，从而提高与每个电池单元的电接触的可靠性，并且有效地防止由杂质，外部物理冲击等引起的电池模块组件的故障。
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