发明申请
US20100035523A1 SEMICONDUCTOR DEVICE FABRICATING METHOD, AND SEMICONDUCTOR FABRICATING DEVICE
审中-公开
半导体器件制造方法和半导体制造装置
- 专利标题： SEMICONDUCTOR DEVICE FABRICATING METHOD, AND SEMICONDUCTOR FABRICATING DEVICE
- 专利标题（中）： 半导体器件制造方法和半导体制造装置
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申请号： US12505639申请日： 2009-07-20
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公开(公告)号： US20100035523A1公开(公告)日： 2010-02-11
- 发明人: Tetsuya Shirasu , Toshiyuki Karasawa , Kenji Nakano
- 申请人： Tetsuya Shirasu , Toshiyuki Karasawa , Kenji Nakano
- 申请人地址： JP Tokyo
- 专利权人： FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人： FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-205525 20080808
- 主分类号： B24B1/00
- IPC分类号： B24B1/00 ; B24B7/20 ; B24B9/06
摘要：
A method for fabricating a semiconductor device includes: supporting a semiconductor substrate formed with a polishing target film by a polishing head; and polishing the polishing target film while restricting movement in a radial direction of the semiconductor substrate by a retainer formed on the polishing head with a tilted surface formed on an inner peripheral section of the retainer, wherein when the polishing target film is polished, an outer peripheral surface of the semiconductor substrate comes into contact with the tilted surface formed on the inner peripheral section of the retainer.
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