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公开(公告)号：US10293458B2
公开(公告)日：2019-05-21
申请号：US14915651
申请日：2014-09-22
发明人： Paul S Lugg , Duy K Lehuu
摘要： A polishing solution includes a fluid component and a plurality of ceramic abrasive composites. The ceramic abrasive composites include individual abrasive particles uniformly dispersed throughout a porous ceramic matrix. At least a portion of the porous ceramic matrix includes glassy ceramic material. The ceramic abrasive composites are dispersed in the fluid component.
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公开(公告)号：US09358663B2
公开(公告)日：2016-06-07
申请号：US14254052
申请日：2014-04-16
IPC分类号： B24B49/02 , B08B1/04 , B24B19/22 , B24B27/033 , B23P6/00 , B24B49/00 , B24B7/20 , B24B19/14 , B24B49/16 , F01D5/00 , F01D5/28
CPC分类号： B24B49/02 , B08B1/04 , B23P6/00 , B23P6/002 , B24B7/20 , B24B19/14 , B24B19/22 , B24B27/033 , B24B49/00 , B24B49/006 , B24B49/16 , F01D5/005 , F01D5/288
摘要： A system for use in removing a multi-layer coating from a substrate is provided. The multi-layer coating includes a first coating applied to the substrate and a second coating applied over the first coating. The first coating is formed from a first material and the second coating is formed from a second material different from the first material. The system includes a grinding mechanism configured to remove the multi-layer coating from the substrate, and a controller coupled in communication with the grinding mechanism. The controller is configured to position the grinding mechanism against the multi-layer coating, initiate a first removal mode that directs the grinding mechanism to traverse across the substrate, monitor a variable operating parameter of the grinding mechanism during the first removal mode, and evaluate a value of the variable operating parameter against a predetermined threshold to determine whether the second coating has been removed from the substrate.
摘要翻译： 提供了一种用于从基板去除多层涂层的系统。 多层涂层包括施加到基底的第一涂层和施加在第一涂层上的第二涂层。 第一涂层由第一材料形成，第二涂层由不同于第一材料的第二材料形成。 该系统包括被配置为从衬底去除多层涂层的研磨机构，以及与磨削机构连通的控制器。 所述控制器被配置成将所述研磨机构定位在所述多层涂层上，启动引导所述研磨机构穿过所述基板的第一移除模式，在所述第一移除模式期间监测所述研磨机构的可变操作参数，并评估 所述可变操作参数的值相对于预定阈值来确定所述第二涂层是否已经从所述基板移除。
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3.发明申请公开(公告)号：US20110195640A1
公开(公告)日：2011-08-11
申请号：US12702333
申请日：2010-02-09
CPC分类号： B24B37/16 , B24B37/22 , B24B37/245
摘要： A chemical mechanical polishing (CMP) system includes a rotating polishing table including a platen providing at least two pressure zones having different pressures; a sub-pad positioned on the platen, the sub-pad including a plurality of openings allowing for transmission of the different pressures therethrough; a fixed abrasive pad positioned on the sub-pad; and a pressure-creating system sealingly coupled to the platen for creating a different pressure in the at least two pressure zones, wherein the different pressures create topography on the fixed abrasive pad. A sub-pad and related method are also provided.
摘要翻译： 化学机械抛光（CMP）系统包括旋转抛光台，其包括提供具有不同压力的至少两个压力区的压板; 位于所述压板上的子垫，所述子垫包括允许通过其传递不同压力的多个开口; 定位在子垫上的固定磨料垫; 以及密封地联接到所述压板的压力产生系统，用于在所述至少两个压力区域中产生不同的压力，其中所述不同压力在所述固定磨料垫上产生形貌。 还提供了一个子垫和相关方法。
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公开(公告)号：US20100273404A1
公开(公告)日：2010-10-28
申请号：US12550544
申请日：2009-08-31
申请人： Allen Chiu , Yu-Lung Jeng
发明人： Allen Chiu , Yu-Lung Jeng
CPC分类号： B24B37/22
摘要： A polishing pad used in semiconductor polishing process is provided in the present invention and a pressure sensitive adhesive is used to couple the polishing pad. The polishing pad includes a substrate, and the substrate includes a polishing surface and a reverse surface corresponding to the polishing surface. The polishing pad is characterized by: a pressure sensitive adhesive formed on the reverse surface of the substrate and used to couple with a bottom layer, and the horizontal adhesion of the pressure sensitive adhesive is higher than the vertical adhesion of the pressure sensitive adhesive.
摘要翻译： 在本发明中提供了用于半导体抛光工艺的抛光垫，并且使用压敏粘合剂来连接抛光垫。 抛光垫包括基板，并且基板包括抛光表面和对应于抛光表面的反面。 抛光垫的特征在于：形成在基板的背面并用于与底层连接的压敏粘合剂，并且压敏粘合剂的水平粘合性高于压敏粘合剂的垂直粘合力。
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公开(公告)号：US20100216378A1
公开(公告)日：2010-08-26
申请号：US12701893
申请日：2010-02-08
申请人： Jaekwang CHOI , Jin-Su Jeong , Myung-Ki Hong , Boun Yoon
发明人： Jaekwang CHOI , Jin-Su Jeong , Myung-Ki Hong , Boun Yoon
CPC分类号： B24B37/26
摘要： Provided is a chemical mechanical polishing (CMP) apparatus. The CMP apparatus may include a polishing pad including a plurality of concave regions. These concave regions may be two-dimensionally arranged in the polishing pad in a first direction and a second direction that are not perpendicular to each other and not parallel to each other. The concave regions arranged in the first direction may have a first pitch, and the concave regions arranged in the second direction may have a second pitch equal to the first pitch.
摘要翻译： 提供了一种化学机械抛光（CMP）装置。 CMP装置可以包括包括多个凹区域的抛光垫。 这些凹区域可以在抛光垫中在彼此不垂直且彼此不平行的第一方向和第二方向上被二维布置。 沿第一方向布置的凹入区域可以具有第一间距，并且沿第二方向布置的凹入区域可以具有等于第一间距的第二间距。
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6.发明申请SUBSTRATE POLISHING APPARATUS AND METHOD OF POLISHING SUBSTRATE USING THE SAME 有权基板抛光装置及使用该抛光装置抛光底板的方法公开(公告)号：US20100136884A1
公开(公告)日：2010-06-03
申请号：US12624967
申请日：2009-11-24
申请人： Sehoon OH , Seong-soo KIM
发明人： Sehoon OH , Seong-soo KIM
CPC分类号： B24B37/042 , B24B41/047 , B24B49/16
摘要： Provided are a substrate polishing apparatus and a method of polishing a substrate using the same. The substrate polishing apparatus includes a substrate supporting member, a polishing unit, and a control unit. The substrate is seated on the rotatable substrate supporting member. The polishing unit includes a rotatable and swingable polishing pad to polish a top surface of the substrate. The control unit controls the substrate supporting member and the polishing unit during a polishing process to adjust a value of a polishing variable adjusting a polishing amount of the substrate according to a horizontal position of the polishing pad with respect to the substrate. Therefore, the substrate polishing apparatus may locally adjust the polishing amount of the substrate to improve polishing uniformity and product yield.
摘要翻译： 本发明提供一种基板研磨装置及使用该基板研磨装置的基板的研磨方法。 基板抛光装置包括基板支撑部件，抛光单元和控制单元。 基板被安置在可旋转的基板支撑构件上。 抛光单元包括可旋转和可摆动的抛光垫，以抛光衬底的顶表面。 控制单元在抛光处理期间控制基板支撑构件和抛光单元，以根据抛光垫相对于基板的水平位置来调整调整基板抛光量的抛光量的值。 因此，基板研磨装置可以局部地调整基板的研磨量，提高抛光均匀性和产品成品率。
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公开(公告)号：US20100099340A1
公开(公告)日：2010-04-22
申请号：US12577351
申请日：2009-10-12
申请人： Hung Chih Chen
发明人： Hung Chih Chen
CPC分类号： B24B37/16
摘要： Embodiments described herein generally relate to the planarization of substrates. In one embodiment, an apparatus for polishing a substrate is provided. The apparatus comprises a rotatable platen having a textured upper surface, at least one groove formed in the upper surface, and a pad disposed on the textured upper surface and bridging the at least one groove.
摘要翻译： 本文描述的实施例通常涉及衬底的平面化。 在一个实施例中，提供了一种用于抛光衬底的装置。 该装置包括具有纹理的上表面的可旋转压板，在上表面中形成的至少一个凹槽，以及设置在纹理化的上表面上并桥接至少一个凹槽的垫。
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公开(公告)号：US20090318063A1
公开(公告)日：2009-12-24
申请号：US12456546
申请日：2009-06-18
申请人： Sudhanshu Misra
发明人： Sudhanshu Misra
CPC分类号： B24B39/00 , B24B37/042 , B24B37/14 , B24B37/26 , B24B57/00 , Y10T428/249953
摘要： Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.
摘要翻译： 本文描述的是用于抛光表面的抛光装置，抛光配方和聚合物基底以及相关方法。 各种设备，配方，基底和方法可以用于涉及金属和/或含金属的表面如半导体晶片的抛光的应用中。 本文所述的装置，制剂，聚合物基材和相关方法可以不使用研磨剂而使用，并且在一些情况下，没有垫表面相对待抛光表面的机械摩擦。 因此，由于这种机械抛光工艺，抛光表面上的缺陷可能会降低。
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公开(公告)号：US20090305613A1
公开(公告)日：2009-12-10
申请号：US12273064
申请日：2008-11-18
申请人： Ki Hoon Choi , Gyo-Woog Koo , Jung-Bong Choi
发明人： Ki Hoon Choi , Gyo-Woog Koo , Jung-Bong Choi
CPC分类号： H01L21/67051 , B24B37/30
摘要： Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one.
摘要翻译： 提供单一基板处理装置和方法。 抛光单元设置在用于对化学和机械抛光的处理室中，并且清洁单元设置在相同的处理室中，用于清洁基板。 因此，根据单个基板处理装置和方法，可以通过单个基板处理方法在相同的处理室中的基板上进行抛光处理和清洁处理，其中基板一个接一个地处理。
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公开(公告)号：US20090209175A1
公开(公告)日：2009-08-20
申请号：US11631417
申请日：2005-07-21
CPC分类号： B24B37/0053 , B24B49/12
摘要： A polishing apparatus can detect escape of a substrate from a top ring during polishing. The polishing apparatus including: a polishing table (10) having a polishing pad (11); a top ring (21); and a substrate escape detection section for detecting escape of the substrate from the top ring, including a light irradiation member (26) for irradiating an area of the upper surface of the polishing pad with light, a controller (32) for controlling the light irradiation of the light irradiation member, an image-taking member (27) for taking an image of the area irradiated with the light, and an information processing member (31) for processing information outputted from the image-taking member, wherein said controller controls the light irradiation member in such a manner that it performs light irradiation at least for a period of time during which the substrate is regarded as being in contact with the polishing pad.
摘要翻译： 抛光装置可以在抛光期间检测衬底从顶环的逸出。 该抛光装置包括：抛光台（10），具有抛光垫（11）; 顶环（21）; 以及用于检测基板从顶环脱落的基板逃逸检测部，包括用于用光照射抛光垫的上表面的区域的光照射部件（26），用于控制光照射的控制器（32） ，用于拍摄照射光的区域的图像的摄像部件（27）和用于处理从摄像部件输出的信息的信息处理部件（31），其中所述控制器控制 光照射部件至少在基板被认为与抛光垫接触的时间段内进行光照射。
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