发明申请
- 专利标题： ENHANCED DISLOCATION STRESS TRANSISTOR
- 专利标题（中）： 增强分离应力晶体管
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申请号： US12191814申请日： 2008-08-14
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公开(公告)号： US20100038685A1公开(公告)日： 2010-02-18
- 发明人: Cory Weber , Mark Liu , Anand Murthy , Hemant Deshpande , Daniel B. Aubertine
- 申请人： Cory Weber , Mark Liu , Anand Murthy , Hemant Deshpande , Daniel B. Aubertine
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A device is provided. The device includes a transistor formed on a semiconductor substrate, the transistor having a conduction channel. The device includes at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate. The device also includes at least one free surface introduced above the conduction channel and the at least one edge dislocation.
公开/授权文献
- US08779477B2 Enhanced dislocation stress transistor 公开/授权日：2014-07-15
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