发明申请
- 专利标题: CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 晶体半导体薄膜,其制造方法,半导体器件及其制造方法
-
申请号: US12574162申请日: 2009-10-06
-
公开(公告)号: US20100038716A1公开(公告)日: 2010-02-18
- 发明人: Shunpei YAMAZAKI , Hisashi OHTANI , Tamae TAKANO
- 申请人: Shunpei YAMAZAKI , Hisashi OHTANI , Tamae TAKANO
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 优先权: JP10-200979 19980715; JP11-135052 19990514
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.