公开(公告)号：US08809133B2

公开(公告)日：2014-08-19

申请号：US13338366

申请日：2011-12-28

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Tamae Takano

IPC分类号： H01L21/84

CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

公开(公告)号：US08497822B2

公开(公告)日：2013-07-30

申请号：US12873507

申请日：2010-09-01

申请人： Hisashi Ohtani ,  Yoshifumi Tanada ,  Aya Anzai

发明人： Hisashi Ohtani ,  Yoshifumi Tanada ,  Aya Anzai

IPC分类号： G09G3/30

CPC分类号： H01L27/3209 ,  G09G3/2022 ,  G09G3/2025 ,  G09G2300/0452 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2320/043 ,  G09G2330/02 ,  H01L27/3244 ,  H01L2251/562

摘要： The invention provides a light emitting device which can suppress the reduction of luminance in accordance with the light emission time and light emission at a high luminance. Moreover, the invention relates to a driving method which can suppress the reduction of luminance in accordance with the light emission time and light emission at a high luminance. The light emitting device of the invention can display a plurality of colors of which brightness and chromaticity are different by visually mixing light emission of a plurality of light emitting elements of which light emission colors are different. When a visually mixed display color is formed, a white light emission is exhibited.

摘要翻译： 本发明提供一种可以根据发光时间和高亮度的发光抑制亮度的降低的发光装置。 此外，本发明涉及一种驱动方法，其可以根据发光时间和高亮度的发光来抑制亮度的降低。 本发明的发光装置可以通过视觉上混合发光颜色不同的多个发光元件的发光来显示亮度和色度不同的多种颜色。 当形成视觉上混合的显示颜色时，表现出白色发光。

公开(公告)号：US08384084B2

公开(公告)日：2013-02-26

申请号：US12849964

申请日：2010-08-04

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Akiharu Miyanaga ,  Yasushi Ogata

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Akiharu Miyanaga ,  Yasushi Ogata

IPC分类号： H01L29/04

CPC分类号： H01L29/78675 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/3221 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78654 ,  Y10S438/973

摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

公开(公告)号：US08368142B2

公开(公告)日：2013-02-05

申请号：US11533212

申请日：2006-09-19

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

IPC分类号： H01L29/02

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/3221 ,  H01L27/10873 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance.

公开(公告)号：US08334645B2

公开(公告)日：2012-12-18

申请号：US13034759

申请日：2011-02-25

申请人： Hisashi Ohtani

发明人： Hisashi Ohtani

IPC分类号： H01L51/00 ,  G09G5/02

CPC分类号： H01L27/156 ,  H01L33/62 ,  H05B33/0821 ,  H05B33/0857 ,  H05B33/145

摘要： It is an object of the invention to provide a light emitting device in which burden on a light emitting element having low luminous efficiency is relieved, and the deterioration of a light emitting element, the reduction in color reproduction due to the deteriorated light emitting element, and increase in electric power consumption can be suppressed. A light emitting device according to the invention has light emitting elements each of which emits one of colors corresponding to three primary colors. Further, one feature of the light emitting device according to the invention has a light emitting element which emits a neutral color. The light emitting device according to the invention has a structure in which a plurality of pixels having light emitting elements each of which emits one of colors corresponding to three primary colors, and a light emitting element which emits a neutral color as one group, are arranged.

摘要翻译： 本发明的目的是提供一种发光装置，其中减轻了发光效率低的发光元件的负担，并且发光元件的劣化，由于劣化的发光元件引起的色彩再现的减少， 并且可以抑制电力消耗的增加。 根据本发明的发光器件具有发光元件，每个发光元件发射对应于三原色的一种颜色。 此外，根据本发明的发光器件的一个特征是具有发出中性色的发光元件。 根据本发明的发光器件具有这样的结构，其中，具有发光元件的多个像素发出与三原色对应的颜色，并且发射中性色的发光元件作为一个组， 。

公开(公告)号：US08248551B2

公开(公告)日：2012-08-21

申请号：US13111344

申请日：2011-05-19

申请人： Hisashi Ohtani ,  Yasushi Ogata

发明人： Hisashi Ohtani ,  Yasushi Ogata

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1333 ,  H01L21/02 ,  H01L27/14

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78645

摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.

摘要翻译： 形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。 在第一绝缘膜上形成平坦度高的第二绝缘膜。 通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。 在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此首先将绝缘膜用作电介质，由此在导电膜和金属布线之间形成像素的辅助电容器。 可以通过在辅助电容器形成液晶分子的取向紊乱（即，旋错）的大的选择区域中来增加有效孔径比。

公开(公告)号：US20120199986A1

公开(公告)日：2012-08-09

申请号：US13449371

申请日：2012-04-18

申请人： Jun Koyama ,  Hisashi Ohtani ,  Yasushi Ogata ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Hisashi Ohtani ,  Yasushi Ogata ,  Shunpei Yamazaki

IPC分类号： H01L33/36

CPC分类号： G02F1/13454 ,  G02F1/136227 ,  H01L27/124

摘要： A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively without increasing the number of manufacturing steps.

摘要翻译： 布线通过多个接触孔与辅助布线并联电连接。 接触孔通过绝缘膜形成并且布置在与布线的垂直方向上。 由于辅助布线形成在与构成TFT的电极相同的层中，所以可以有效地降低布线的电阻而不增加制造步骤的数量。

公开(公告)号：USRE43450E1

公开(公告)日：2012-06-05

申请号：US10678139

申请日：2003-10-06

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L21/336 ,  C30B1/02 ,  C30B31/02 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L29/78675

摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.

摘要翻译： 本发明的一个目的是提供一种通过使用镍结晶的还原硅膜中的镍元素的技术。 将非常少量的镍引入形成在玻璃基板上的非晶硅膜中。 然后通过加热使非晶硅膜结晶。 此时，镍元素残留在结晶硅膜中。 然后在镍的作用下，在硅膜的表面上形成非晶硅膜。 然后将非晶硅膜进一步热处理。 通过进行这种热处理，镍元素从结晶硅膜分散到非晶硅膜中，结果是结晶硅膜中的镍密度降低。

公开(公告)号：US20120034766A1

公开(公告)日：2012-02-09

申请号：US13209861

申请日：2011-08-15

申请人： Hisashi OHTANI ,  Akiharu MIYANAGA ,  Takeshi FUKUNAGA ,  Hongyong ZHANG

发明人： Hisashi OHTANI ,  Akiharu MIYANAGA ,  Takeshi FUKUNAGA ,  Hongyong ZHANG

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US20110262117A1

公开(公告)日：2011-10-27

申请号：US13174924

申请日：2011-07-01

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Yasuyuki Arai

IPC分类号： F27D11/12

CPC分类号： H01L21/67109 ,  C30B33/00

摘要： An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas.

摘要翻译： 本发明的目的是提供一种激活添加到半导体膜中的杂质元素的方法，以及在使用具有低耐热性的基板（例如玻璃）制造半导体器件的过程中，而不改变形状 基板，通过使用短时间的热处理工艺。 另一个目的是提供一种使这种类型的热处理过程成为可能的热处理设备。 用于从反应室的上游侧供给气体的单元，用于加热反应室上游侧的气体的单元，在反应室的下游侧保持被处理基板的单元， 准备将气体从反应室的下游侧向上游侧循环的单元。 用于加热气体的电力量可以通过循环用于加热被处理基板的气体来节约。 循环气体的一部分可以被排出，并且可以用作热源以便预热新引入的气体。