发明申请
US20100040961A1 HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF
有权
HALFTONE类型相移屏蔽区和相位移屏蔽
- 专利标题： HALFTONE TYPE PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK THEREOF
- 专利标题（中）： HALFTONE类型相移屏蔽区和相位移屏蔽
-
申请号： US12542282申请日： 2009-08-17
-
公开(公告)号： US20100040961A1公开(公告)日： 2010-02-18
- 发明人: Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
- 申请人： Yuuki Shiota , Osamu Nozawa , Hideaki Mitsui
- 申请人地址： JP Tokyo
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2002047050 20020222; JP2002124769 20020425; JP2002325200 20021108
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.
公开/授权文献
信息查询
