公开(公告)号：US08609304B2

公开(公告)日：2013-12-17

申请号：US13436132

申请日：2012-03-30

申请人： Masaru Tanabe ,  Hideaki Mitsui ,  Naoki Nishida ,  Satoshi Iwashita

发明人： Masaru Tanabe ,  Hideaki Mitsui ,  Naoki Nishida ,  Satoshi Iwashita

IPC分类号： G03F1/50

CPC分类号： G03F1/84 ,  G03F1/70 ,  G03F1/72

摘要： An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.

摘要翻译： 使用检查装置的透射光量分布数据检测转印掩模的内部缺陷等。 使用管芯间的比较检查方法，将检查光照射到薄膜的第一区域以获得第一透射光量分布，也将检查光照射到薄膜的第二区域，以获得第二透射光 通过绘制从第一透射光量分布和第二透射光量分布之间的比较计算出的差光量值分别不小于第一阈值的坐标，并产生预定范围的差分布， 小于第二阈值，并且选择在预定范围差分布中未检测到具有高密度绘图密度的区域的转印掩模。

公开(公告)号：US08021806B2

公开(公告)日：2011-09-20

申请号：US12493641

申请日：2009-06-29

申请人： Masahiro Hashimoto ,  Hideaki Mitsui

发明人： Masahiro Hashimoto ,  Hideaki Mitsui

IPC分类号： G03F1/00

CPC分类号： G03F1/38 ,  G03F1/32 ,  G03F1/34 ,  G03F1/80

摘要： A photomask blank for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. An etching mask film serving as an etching mask when forming a phase shift part is provided on the front surface side, where the phase shift part is to be formed, of the substrate. A light-shielding film serving to shield exposure light is provided on the back surface side (opposite-side surface) of the substrate.

摘要翻译： 一种用于制造相移掩模的光掩模坯料，其具有设置有相移部分的透光衬底，该相移部件适于对透射的曝光光产生预定的相位差。 在形成相移部分时用作蚀刻掩模的蚀刻掩模膜设置在衬底的形成相移部分的正面上。 用于屏蔽曝光光的遮光膜设置在基板的背面侧（相对侧面）。

公开(公告)号：US07592106B2

公开(公告)日：2009-09-22

申请号：US11562217

申请日：2006-11-21

申请人： Yuuki Shiota ,  Osamu Nozawa ,  Hideaki Mitsui

发明人： Yuuki Shiota ,  Osamu Nozawa ,  Hideaki Mitsui

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/32 ,  G03F1/84

摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.

摘要翻译： 一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

公开(公告)号：US20070092808A1

公开(公告)日：2007-04-26

申请号：US11562217

申请日：2006-11-21

申请人： Yuuki Shiota ,  Osamu Nozawa ,  Hideaki Mitsui

发明人： Yuuki Shiota ,  Osamu Nozawa ,  Hideaki Mitsui

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F1/84

摘要： A halftone type phase shift mask blank including, on a transparent substrate, at least a phase shifter film having a predetermined transmittance for an exposed light and a predetermined phase difference for the transparent substrate, wherein the phase shifter film is formed by a multilayer film in which films including at least two layers having an upper layer formed on the most surface side and a lower layer formed thereunder are provided, and a thickness of the upper layer is adjusted in such a manner that a refractive index of the film to be the upper layer is smaller than that of the film to be the lower layer and a surface reflectance for the inspecting light of the phase shifter film is maximized and approximates to a maximum.

摘要翻译： 一种半透明型相移掩模坯料，在透明基板上具有至少一透明基板具有预定透射率的移相膜和对于该透明基板的预定相位差，其中该移相膜由多层膜形成 提供包括至少两层具有形成在最表面侧的上层和下面形成的下层的膜，并且以使膜的折射率成为上层的方式调节上层的厚度 层比作为下层的膜小，并且移相膜的检查光的表面反射率最大化并近似为最大。

公开(公告)号：US06783634B2

公开(公告)日：2004-08-31

申请号：US09952445

申请日：2001-09-12

申请人： Osamu Nozawa ,  Hideaki Mitsui

发明人： Osamu Nozawa ,  Hideaki Mitsui

IPC分类号： C23C1434

CPC分类号： G03F1/32 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/225 ,  C23C14/505 ,  G03F1/26 ,  G03F1/68

摘要： There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

摘要翻译： 公开了一种相移掩模坯料的制造方法，其中可以尽可能地减少坯料之间的相位角和透射率的分散，并且产率令人满意。 在相移掩模空白的制造方法中，使用溅射法在透明基板上连续地形成薄膜的工艺包括：依次对多个基板进行一系列将透明基板供应到溅射室 在溅射室中形成用于形成图案的薄膜，并且从其上形成的膜从溅射室排出透明基板; 基本上以一定间隔供给和排出透明基板; 并且在多个坯料中将成膜时间设定为恒定。

公开(公告)号：US6087047A

公开(公告)日：2000-07-11

申请号：US153027

申请日：1998-09-15

申请人： Hideaki Mitsui ,  Osamu Nozawa ,  Megumi Takeuchi

发明人： Hideaki Mitsui ,  Osamu Nozawa ,  Megumi Takeuchi

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： In a half-tone type phase shift mask blank in which a semi-transparent film is formed on a transparent substrate, and the semi-transparent film serves to shift phase of a first optical light beam which transmits the semi-transparent film for a second optical light beam which directly transmits the transparent substrate and further, serves to reduce strength of the first optical light beam, the semi-transparent film includes silicon and nickel, and at least one selected from the group consisting of nitrogen, oxygen and hydrogen, and the relationship between the silicon and the nickel is specified by a formula in which a rate of [atom % of the nickel in the film] for [atom % of the nickel in the film+atom % of the silicon in the film] falls within the range between 0.15 and 0.5.

摘要翻译： 在透明基板上形成半透明膜的半色调型相移掩模坯料中，半透明膜用于将透过半透明膜的第一光束的相位偏移一秒 直接透过透明基板的光束，进一步降低第一光束的强度，半透明膜包括硅和镍，以及选自氮，氧和氢的至少一种，以及 硅和镍之间的关系由以下公式确定：其中[膜中的镍原子％的原子％的原子％与膜中的硅的原子％的比率]落入其中 范围在0.15和0.5之间。

公开(公告)号：US5955223A

公开(公告)日：1999-09-21

申请号：US816942

申请日：1997-03-14

申请人： Hideaki Mitsui ,  Kenji Matsumoto ,  Yoichi Yamaguchi

发明人： Hideaki Mitsui ,  Kenji Matsumoto ,  Yoichi Yamaguchi

IPC分类号： F02G5/00 ,  F02M45/04 ,  F02M47/00 ,  F02M47/02 ,  F02M51/06 ,  F02M57/02 ,  F02M59/10 ,  F02M59/36 ,  F02M59/46 ,  F02M63/00 ,  G03F1/00 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： PURPOSE: To provide the phase shift mask which can be produced while the generation of microdefects is suppressed with relatively simple stages and with which pattern transfer with a high resolution is possible and the phase shift mask blank which is the blank material thereof.CONSTITUTION: The mask patterns to be formed on a transparent substrate 1 of this phase shift mask are composed of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of the light of the intensity substantially contributing to exposing. The phase shift mask is so formed that the phase of the light past the light translucent parts 2 and the phase of the light past the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light rays passing near the boundary parts of the light transparent parts 4 and the light translucent parts 2 are negated with each other and the contrast in the boundary parts is well maintained. The light translucent parts 2 are composed of thin films consisting of materials consisting of oxygen, molybdenum and silicide as main constituting elements.

摘要翻译： 目的：提供可以在相对简单的阶段抑制微缺陷的产生并且可以以高分辨率进行图案转印并且作为其空白材料的相移掩模坯料的同时产生的相移掩模。 构成：在该相移掩模的透明基板1上形成的掩模图案由透光部分4构成，透光部分4允许传播强度大致有助于曝光的光和透光部分2，光透射部分2允许透射光 的强度基本上有助于曝光。 相移掩模被形成为使得通过光半透明部分2的光的相位和光通过光透射部分4的相位通过偏移通过光半透明部分2的光的相位而变化，由此 通过透光部4和光半透明部2的边界附近的光线相互抵消，边界部的对比度保持良好。 光半透明部分2由作为主要构成元素的由氧，钼和硅化物组成的材料构成的薄膜构成。

公开(公告)号：US20100075236A1

公开(公告)日：2010-03-25

申请号：US12562617

申请日：2009-09-18

申请人： Masahiro Hashimoto ,  Hideaki Mitsui

发明人： Masahiro Hashimoto ,  Hideaki Mitsui

IPC分类号： G03F1/00

CPC分类号： G03F1/34 ,  G03F1/32 ,  G03F1/80

摘要： A photomask blank is for fabricating a phase shift mask having a light-transmissive substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. The phase shift part is a dug-down part formed by digging down the light-transmissive substrate from a surface thereof to a digging depth adapted to produce the predetermined phase difference with respect to exposure light transmitted through the light-transmissive substrate at a portion where the phase shift part is not provided. The photomask blank includes a light-shielding part formed in a peripheral area around a transfer pattern area of the surface of the light-transmissive substrate and adapted to shield exposure light and further includes an etching mask film formed in the transfer pattern area of the surface of the light-transmissive substrate and made of a material being substantially dry-etchable with a chlorine-based gas, but not substantially dry-etchable with a fluorine-based gas, the etching mask film serving as an etching mask at least until the digging depth is reached when forming the dug-down part.

摘要翻译： 光掩模坯件用于制造具有透光基板的相移掩模，该透光基板设置有适于给予透射曝光的预定相位差的相移部分。 相移部分是通过从其表面向下挖掘透光性基板而形成的挖掘部分，其适用于相对于透过透光基板的曝光光产生预定相位差， 不设置相移部。 光掩模坯料包括形成在透光基板的表面的转印图案区域周围的周边区域中的遮光部，其适于屏蔽曝光光，并且还包括形成在表面的转印图案区域中的蚀刻掩模膜 由基于氯的气体基本可干蚀刻的材料制成，但基本上不能用氟基气体干法蚀刻的材料制成，所述蚀刻掩模膜至少直到挖掘为止 在形成挖掘部分时达到深度。

公开(公告)号：US20090325084A1

公开(公告)日：2009-12-31

申请号：US12493641

申请日：2009-06-29

申请人： Masahiro HASHIMOTO ,  Hideaki Mitsui

发明人： Masahiro HASHIMOTO ,  Hideaki Mitsui

IPC分类号： G03F1/00

CPC分类号： G03F1/38 ,  G03F1/32 ,  G03F1/34 ,  G03F1/80

摘要： A photomask blank for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. An etching mask film serving as an etching mask when forming a phase shift part is provided on the front surface side, where the phase shift part is to be formed, of the substrate. A light-shielding film serving to shield exposure light is provided on the back surface side (opposite-side surface) of the substrate.

摘要翻译： 一种用于制造相移掩模的光掩模坯料，其具有设置有相移部分的透光衬底，该相移部件适于对透射的曝光光产生预定的相位差。 在形成相移部分时用作蚀刻掩模的蚀刻掩模膜设置在衬底的形成相移部分的正面上。 用于屏蔽曝光光的遮光膜设置在基板的背面侧（相对侧面）。

公开(公告)号：US07115341B2

公开(公告)日：2006-10-03

申请号：US10370776

申请日：2003-02-24

申请人： Yuuki Shiota ,  Osamu Nozawa ,  Ryo Ohkubo ,  Hideaki Mitsui

发明人： Yuuki Shiota ,  Osamu Nozawa ,  Ryo Ohkubo ,  Hideaki Mitsui

IPC分类号： G01F9/00

CPC分类号： G03F1/32 ,  G03F1/80 ,  Y10T428/24331 ,  Y10T428/31616

摘要： A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.