发明申请
- 专利标题： Structure, Design Structure and Method of Manufacturing a Structure Having VIAS and High Density Capacitors
- 专利标题（中）： 具有VIAS和高密度电容器的结构，设计结构和制造方法
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申请号： US12191379申请日： 2008-08-14
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公开(公告)号： US20100041203A1公开(公告)日： 2010-02-18
- 发明人: David S. Collins , Kai D. Feng , Zhong-Xiang He , Peter J. Lindgren , Robert M. Rassel
- 申请人： David S. Collins , Kai D. Feng , Zhong-Xiang He , Peter J. Lindgren , Robert M. Rassel
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench formed in a substrate and a via arranged in a second trench formed in the substrate. The first and second trenches have different depths in the substrate.
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