发明申请
- 专利标题: ELECTRODE STRUCTURE AND METHOD FOR FORMING BUMP
- 专利标题(中): 电极结构和形成BUMP的方法
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申请号: US12518358申请日: 2007-11-27
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公开(公告)号: US20100044091A1公开(公告)日: 2010-02-25
- 发明人: Yasushi Taniguchi , Seiichi Nakatani , Takashi Kitae , Seiji Karashima , Kenichi Hotehama
- 申请人: Yasushi Taniguchi , Seiichi Nakatani , Takashi Kitae , Seiji Karashima , Kenichi Hotehama
- 申请人地址: JP Kadoma-shi, Osaka
- 专利权人: PANASONIC CORPORATION
- 当前专利权人: PANASONIC CORPORATION
- 当前专利权人地址: JP Kadoma-shi, Osaka
- 优先权: JP2006-339654 20061218
- 国际申请: PCT/JP2007/072795 WO 20071127
- 主分类号: H05K1/11
- IPC分类号: H05K1/11 ; H05K3/34
摘要:
An electrode structure 100 on which a solder bump is placed includes an electrode pattern 50 made of an electrode-constituting material selected from the group consisting of Cu, Al, Cr, and Ti, a Ni layer 52 formed on a part of the electrode pattern 50, a Pd layer 54 formed on at least a part of a region other than the part of the electrode pattern 50, and an Au layer 56 formed on the Ni layer 52 and the Pd layer 54.
公开/授权文献
- US08887383B2 Electrode structure and method for forming bump 公开/授权日:2014-11-18
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