Invention Application
US20100044552A1 AUTOMATIC SIMULTANEOUS DUAL GAIN READOUT INTEGRATED CIRCUIT USING THRESHOLD VOLTAGE SHIFTS OF MOSFET BULK TO SOURCE POTENTIAL 审中-公开
自动同步双增益读出集成电路,使用MOSFET大容量的阈值电压转换为源极电位

  • Patent Title: AUTOMATIC SIMULTANEOUS DUAL GAIN READOUT INTEGRATED CIRCUIT USING THRESHOLD VOLTAGE SHIFTS OF MOSFET BULK TO SOURCE POTENTIAL
  • Patent Title (中): 自动同步双增益读出集成电路,使用MOSFET大容量的阈值电压转换为源极电位
  • Application No.: US12194505
    Application Date: 2008-08-19
  • Publication No.: US20100044552A1
    Publication Date: 2010-02-25
  • Inventor: Bryan J. CHEN
  • Applicant: Bryan J. CHEN
  • Applicant Address: US MD Bethesda
  • Assignee: Lockheed Martin Corporation
  • Current Assignee: Lockheed Martin Corporation
  • Current Assignee Address: US MD Bethesda
  • Main IPC: H01L27/00
  • IPC: H01L27/00 H03F3/08
AUTOMATIC SIMULTANEOUS DUAL GAIN READOUT INTEGRATED CIRCUIT USING THRESHOLD VOLTAGE SHIFTS OF MOSFET BULK TO SOURCE POTENTIAL
Abstract:
The present disclosure is directed to automatic gain switching circuits for implementation with photodetectors that include a switchable storage network including a storage element. The switchable storage network, such as one or more capacitors, is configured and arranged to respond to a photocurrent from the photodetector and provide an increased storage for the circuit at a predetermined photocurrent. The storage elements can include one or more capacitors that can be coupled to integration capacitors of the photodetector. The switchable networks can include flux sensing switches such as MOSFETS that can activate at a desired or predetermined photocurrent level. Related methods of providing multiple gain values for a photodetector circuit, as well as focal plane arrays and imaging systems with automatic gain shifting are also described.
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