发明申请
- 专利标题： SELF-ALIGNED IMPACT-IONIZATION FIELD EFFECT TRANSISTOR
- 专利标题（中）： 自对准的影响离子场效应晶体管
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申请号： US12514940申请日： 2007-11-13
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公开(公告)号： US20100044760A1公开(公告)日： 2010-02-25
- 发明人: Gilberto Curatola , Mark Van Dal , Jan Sonsky
- 申请人： Gilberto Curatola , Mark Van Dal , Jan Sonsky
- 申请人地址： NL Eindhoven
- 专利权人： NXP, B.V.
- 当前专利权人： NXP, B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP06124250.9 20061116
- 国际申请： PCT/IB07/54607 WO 20071113
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
An impact ionisation MOSFET is formed with the offset from the gate to one of the source/drain regions disposed vertically within the device structure rather than horizontally. The semiconductor device comprises a first source/drain region having a first doping level; a second source/drain region having a second doping level and of opposite dopant type to the first source/drain region, the first and second source/drain regions being laterally separated by an intermediate region having a doping level less than either of the first and second doping levels; a gate electrode electrically insulated from, and disposed over, the intermediate region, the first and second source/drain regions being laterally aligned with the gate electrode; where the entire portion of the first source/drain region that forms a boundary with the intermediate region is separated vertically from the top of the intermediate region.
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