Invention Application
US20100048006A1 PHOSPHOROUS-COMPRISING DOPANTS AND METHODS FOR FORMING PHOSPHOROUS-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING PHOSPHOROUS-COMPRISING DOPANTS
有权
磷光体包含多晶硅的方法及其在使用磷光体掺杂的半导体衬底中形成磷光体区域的方法
- Patent Title: PHOSPHOROUS-COMPRISING DOPANTS AND METHODS FOR FORMING PHOSPHOROUS-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING PHOSPHOROUS-COMPRISING DOPANTS
- Patent Title (中): 磷光体包含多晶硅的方法及其在使用磷光体掺杂的半导体衬底中形成磷光体区域的方法
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Application No.: US12194688Application Date: 2008-08-20
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Publication No.: US20100048006A1Publication Date: 2010-02-25
- Inventor: Hong Min Huang , Carol Gao , Zhe Ding , Albert Peng , Ya Qun Liu
- Applicant: Hong Min Huang , Carol Gao , Zhe Ding , Albert Peng , Ya Qun Liu
- Applicant Address: US NJ Morristown
- Assignee: HONEYWELL INTERNATIONAL INC.
- Current Assignee: HONEYWELL INTERNATIONAL INC.
- Current Assignee Address: US NJ Morristown
- Main IPC: H01L21/22
- IPC: H01L21/22 ; C09K3/00
Abstract:
Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.
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