发明申请
- 专利标题： Doped Layers for Reducing Electromigration
- 专利标题（中）： 用于减少电迁移的掺杂层
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申请号： US12198083申请日： 2008-08-25
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公开(公告)号： US20100048018A1公开(公告)日： 2010-02-25
- 发明人: Atul Gupta , Heyun Yin , Vikram Singh
- 申请人： Atul Gupta , Heyun Yin , Vikram Singh
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of fabricating metal interconnects with reduced electromigration includes depositing metal interconnects on a substrate comprising electronic devices. A layer is deposited on the metal interconnects. The layer is doped with at least one dopant having a dopant concentration that increases an electromigration resistance of the metal atoms.
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