Invention Application
US20100051098A1 HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS
有权
高性能TCO硅界面接触结构，用于高效薄膜硅太阳能电池
- Patent Title: HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS
- Patent Title (中): 高性能TCO硅界面接触结构，用于高效薄膜硅太阳能电池
-
Application No.: US12481175Application Date: 2009-06-09
-
Publication No.: US20100051098A1Publication Date: 2010-03-04
- Inventor: Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
- Applicant: Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/18
Abstract:
A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
Public/Granted literature
- US08895842B2 High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells Public/Granted day:2014-11-25
Information query
IPC分类:
