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    SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS
    3.
    发明申请
    SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS 审中-公开
    用于太阳能电池应用的透明导电氧化层的表面处理工艺

    公开(公告)号：US20120107996A1

    公开(公告)日：2012-05-03

    申请号：US12916526

    申请日：2010-10-30

    申请人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

    发明人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

    IPC分类号： H01L31/18

    CPC分类号： H01L31/076 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/548

    摘要： Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer.

    摘要翻译： 本发明的实施方案提供了在用于太阳能电池器件的透明导电氧化物层上进行表面处理工艺的方法。 在一个实施例中，执行表面处理工艺的方法包括提供在处理室中设置有透明导电氧化物层的衬底，将包含含氧气体的气体混合物供应到处理室中，并且使用 在透明导电氧化物层的表面上的气体混合物。

    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS
    4.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
    用于在太阳能电池应用中使用的发射导电氧化物层上的硅层沉积的方法和装置

    公开(公告)号：US20080289686A1

    公开(公告)日：2008-11-27

    申请号：US11752794

    申请日：2007-05-23

    申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    IPC分类号： H01L31/04 ,  C23C16/00

    CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/04 ,  Y02E10/50

    摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

    摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

    METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE
    6.
    发明申请
    METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE 审中-公开
    用于形成具有低接触电阻的光伏器件的方法

    公开(公告)号：US20080245414A1

    公开(公告)日：2008-10-09

    申请号：US11733184

    申请日：2007-04-09

    申请人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

    发明人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

    IPC分类号： H01L31/00

    CPC分类号： H01L31/022425 ,  H01L31/0745 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.

    摘要翻译： 提供了一种改进的PV太阳能电池结构及其制造方法。 在一个实施例中，光伏器件包括第一光电转换单元，第一透明导电氧化物层和设置在光电转换单元和透明导电氧化物层之间并与之接触的第一微晶硅层。 在另一实施例中，形成光伏太阳能电池的方法包括提供一个其上设置有第一透明导电氧化物层的衬底，在透明导电氧化物层上沉积第一微晶硅层，以及在微晶硅上形成第一光电转换单元 层。

    METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE
    7.
    发明申请
    METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE 审中-公开
    形成薄膜太阳能装置的方法

    公开(公告)号：US20110232753A1

    公开(公告)日：2011-09-29

    申请号：US12729777

    申请日：2010-03-23

    申请人： Shuran Sheng ,  Yong Kee Chae

    发明人： Shuran Sheng ,  Yong Kee Chae

    IPC分类号： H01L31/0368 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1812 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer.

    摘要翻译： 提供了制造太阳能电池活性层的方法和装置。 掺杂微晶半导体层在低氢流速下由带隙增强合金材料形成。 在半导体源的低流量下建立沉积条件，并且随着沉积第一子层而倾斜到高流量。 将带隙增强合金材料加入到反应混合物中以沉积第二子层。 带隙增强合金材料可以可选地停止以沉积第三子层。

    Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
    9.
    发明授权
    Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications 失效
    在适用于太阳能电池应用的激光划线透明导电氧化物层上沉积硅层

    公开(公告)号：US07964430B2

    公开(公告)日：2011-06-21

    申请号：US11752823

    申请日：2007-05-23

    申请人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    发明人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    IPC分类号： H01L21/332 ,  H01L21/00

    CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

    摘要： Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

    摘要翻译： 提供了减少透明导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透明导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

    MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS
    10.
    发明申请
    MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS 审中-公开
    薄膜和基于波浪的太阳能应用的微晶硅合金

    公开(公告)号：US20100269896A1

    公开(公告)日：2010-10-28

    申请号：US12637630

    申请日：2009-12-14

    申请人： Shuran SHENG ,  Yong Kee Chae

    发明人： Shuran SHENG ,  Yong Kee Chae

    IPC分类号： H01L31/0288 ,  H01L31/02 ,  B05C11/00

    CPC分类号： C23C16/325 ,  C23C16/5096 ,  H01L31/0236 ,  H01L31/0547 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as light-trapping enhancement layers and charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap and high conductivity.

    摘要翻译： 提供一种用于形成太阳能电池的方法和装置。 包括碳，氧和氮的掺杂的晶体半导体合金被用作薄膜太阳能电池的光俘获增强层和电荷收集层。 半导体合金层通过向处理室提供半导体源化合物和共组分源化合物形成，并使气体离子化以在衬底上沉积一层。 合金层提供改进的折射率控制，宽光学带隙和高导电性。