发明申请
US20100051454A1 MAGNETRON SPUTTERING ELECTRODE, AND SPUTTERING APPARATUS PROIDED WITH MAGNETRON SPUTTERING ELECTRODE
有权
MAGNETRON喷溅电极,以及配有MAGNETRON SPUTTERING ELECTRODE的溅射装置
- 专利标题: MAGNETRON SPUTTERING ELECTRODE, AND SPUTTERING APPARATUS PROIDED WITH MAGNETRON SPUTTERING ELECTRODE
- 专利标题(中): MAGNETRON喷溅电极,以及配有MAGNETRON SPUTTERING ELECTRODE的溅射装置
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申请号: US12514513申请日: 2007-11-13
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公开(公告)号: US20100051454A1公开(公告)日: 2010-03-04
- 发明人: Yasuhiko Akamatsu , Tatsunori Isobe , Makoto Arai , Junya Kiyota , Takashi Komatsu
- 申请人: Yasuhiko Akamatsu , Tatsunori Isobe , Makoto Arai , Junya Kiyota , Takashi Komatsu
- 优先权: JP2006-311623 20061117; JP2006-311624 20061117
- 国际申请: PCT/JP2007/071965 WO 20071113
- 主分类号: C23C14/35
- IPC分类号: C23C14/35
摘要:
In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.
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