发明申请
US20100052008A1 ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT
失效
通过波形离轴切割增强氮化物发光二极管的光学极化
- 专利标题: ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT
- 专利标题(中): 通过波形离轴切割增强氮化物发光二极管的光学极化
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申请号: US12364272申请日: 2009-02-02
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公开(公告)号: US20100052008A1公开(公告)日: 2010-03-04
- 发明人: Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
- 申请人: Hisashi Masui , Hisashi Yamada , Kenji Iso , Asako Hirai , Makoto Saito , James S. Speck , Shuji Nakamura , Steven P. DenBaars
- 申请人地址: US CA Oakland
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US CA Oakland
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/20
摘要:
An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.
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