发明申请
US20100052008A1 ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT 失效
通过波形离轴切割增强氮化物发光二极管的光学极化

ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY WAFER OFF-AXIS CUT
摘要:
An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0 and 27°.
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