Invention Application
- Patent Title: HIGH-K METAL GATE STRUCTURE INCLUDING BUFFER LAYER
- Patent Title (中): 高K金属结构包括缓冲层
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Application No.: US12422378Application Date: 2009-04-13
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Publication No.: US20100052077A1Publication Date: 2010-03-04
- Inventor: Peng-Fu Hsu , Hsin-Chun Ko , Kang-Cheng Lin , Kuo-Tai Huang
- Applicant: Peng-Fu Hsu , Hsin-Chun Ko , Kang-Cheng Lin , Kuo-Tai Huang
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A high-k metal gate structure including a buffer layer and method of fabrication of such, is provided. The buffer layer may interpose an interface oxide layer and a high-k gate dielectric layer. In one embodiment, the buffer layer includes aluminum oxide. The buffer layer and the high-k gate dielectric layer may be formed in-situ using an atomic layer deposition (ALD) process.
Information query
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