发明申请
- 专利标题： CU WIRE IN SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- 专利标题（中）： CU线上半导体器件及其制造方法
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申请号： US12515538申请日： 2007-11-19
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公开(公告)号： US20100052171A1公开(公告)日： 2010-03-04
- 发明人: Hirotaka Ito , Takashi Onishi , Mikako Takeda , Masao Mizuno
- 申请人： Hirotaka Ito , Takashi Onishi , Mikako Takeda , Masao Mizuno
- 申请人地址： JP Kobe-shi
- 专利权人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, Ltd)
- 当前专利权人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, Ltd)
- 当前专利权人地址： JP Kobe-shi
- 优先权： JP2006-320572 20061128; JP2007-267180 20071012
- 国际申请： PCT/JP07/72417 WO 20071119
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/768
摘要：
A Cu wire in a semiconductor device according to the present invention is a Cu wire embedded into wiring gutters or interlayer connective channels formed in an insulating film on a semiconductor substrate and the Cu wire comprises: a barrier layer comprising TaN formed on the wiring gutter side or the interlayer connective channel side; and a wire main body comprising Cu comprising one or more elements selected from the group consisting of Pt, In, Ti, Nb, B, Fe, V, Zr, Hf, Ga, Tl, Ru, Re, and Os in a total content of 0.05 to 3.0 atomic percent. The Cu wire in a semiconductor device according to the present invention is excellent in adhesiveness between the wire main body and the barrier layer.
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