发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12546916申请日: 2009-08-25
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公开(公告)号: US20100052185A1公开(公告)日: 2010-03-04
- 发明人: Akira TOJO , Tomoyuki Kitani , Tomohiro Iguchi , Takahiro Aizawa , Hideo Nishiuchi , Masako Fukumitsu
- 申请人: Akira TOJO , Tomoyuki Kitani , Tomohiro Iguchi , Takahiro Aizawa , Hideo Nishiuchi , Masako Fukumitsu
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-226236 20080903
- 主分类号: H01L23/28
- IPC分类号: H01L23/28 ; H01L21/56
摘要:
According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a semiconductor element, a first electrode of the semiconductor chip being configured on a first surface of the semiconductor element, a second electrode of the semiconductor element being configured on a second surface opposed to the first surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, a first hole and a second hole being configured in the encapsulating material, a portion of the first electrode and a portion of the second electrode being exposed, a first conductive material being connected to the first surface of the semiconductor chip via the first hole, a second conductive material being connected to the second surface of the semiconductor chip via the second hole, and a plating film covering five surfaces of the first conductive material other than one surface contacting with the encapsulating material and five surfaces of the second conductive material other than one surface contacting with the encapsulating material.
公开/授权文献
- US08193643B2 Semiconductor device and method for fabricating the same 公开/授权日:2012-06-05
信息查询
IPC分类: