According to one embodiment, a magnetoresistive head has a magnetoresistive sensor film between a lower shield layer and an upper shield layer. The magnetoresistive sensor film is formed by stacking at least a pinning layer, a first ferromagnetic layer, an intermediate layer, and a second ferromagnetic layer, in which a sense current flows so as to pass through an interface between the intermediate layer and the second ferromagnetic layer, and a resistance change of the magnetoresistive sensor film in accordance with the change of an external magnetic field is detected. Also, a lateral side metal layer having an electric resistivity lower than the electric resistivity of the pinning layer is disposed at least on a side wall of the pinning layer among side walls of layers constituting the magnetoresistive sensor film, the lateral side metal layer being in contact with the lower shield layer. Other embodiments are described as well.