发明申请
- 专利标题： Memory and Reading Method Thereof
- 专利标题（中）： 记忆和阅读方法
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申请号： US12204009申请日： 2008-09-04
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公开(公告)号： US20100054045A1公开(公告)日： 2010-03-04
- 发明人: Wen-Chiao Ho , Chin-Hung Chang , Kuen-Long Chang , Chun-Hsiung Hung
- 申请人： Wen-Chiao Ho , Chin-Hung Chang , Kuen-Long Chang , Chun-Hsiung Hung
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A memory includes many memory regions each including a target memory cell, a source line, a bit line and a reading control circuit. The source line is coupled to a first terminal of the target memory cell. The bit line is coupled to a second terminal of the target memory cell. The reading control circuit is for selectively applying a working voltage to the source line.
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