Invention Application
- Patent Title: HIGH-DENSITY 3-DIMENSIONAL STRUCTURE
- Patent Title (中): 高密度三维结构
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Application No.: US12552032Application Date: 2009-09-01
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Publication No.: US20100055507A1Publication Date: 2010-03-04
- Inventor: Jean-Luc Morand
- Applicant: Jean-Luc Morand
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Priority: FR08/55906 20080903
- Main IPC: B32B3/00
- IPC: B32B3/00 ; H01M8/00 ; H01M10/00 ; H01G4/00 ; H01L29/06

Abstract:
A 3-D structure formed in a recess of a substrate delimited by walls, including a large number of rectangle parallelepipedic blades extending from the bottom of the recess to the substrate surface while being oriented perpendicularly to one another and formed in a pattern covering the whole surface of the recess, some blades being non-secant to one of the walls, each non-secant blade being connected to one of the walls by at least another perpendicular blade.
Public/Granted literature
- US08710598B2 High-density 3-dimensional structure Public/Granted day:2014-04-29
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