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公开(公告)号：US08166769B2
公开(公告)日：2012-05-01
申请号：US12550578
申请日：2009-08-31
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
IPC: F25B21/02
CPC classification number: H01L35/32 , H01L23/38 , H01L2924/0002 , H01L2924/00
Abstract: A self-cooled electronic component comprising a vertical monolithic circuit, in which the vertical monolithic circuit is electrically connected in series with a Peltier cooler so that the D.C. current flowing through the circuit supplies the cooler and in which the circuit and the cooler are placed against each other so that the cold surface of the cooler is in thermal contact with the circuit.
Abstract translation: 一种自冷却电子部件，包括垂直单片电路，其中垂直单片电路与珀尔帖冷却器串联电连接，使得流过电路的直流电流供应冷却器，并且电路和冷却器放置在其中 使得冷却器的冷表面与电路热接触。
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公开(公告)号：US07053404B2
公开(公告)日：2006-05-30
申请号：US10763579
申请日：2004-01-22
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
CPC classification number: H01L29/0692 , H01L29/417 , H01L29/73 , H01L29/74 , H01L29/861
Abstract: A semiconductor component in which the active junctions extend along at least one cylinder perpendicular to the main surfaces of a semiconductor chip substantially across the entire thickness thereof, said cylinder(s) having a cross-section with an undulated closed curve shape.
Abstract translation: 一种半导体部件，其中所述有源接合部沿着垂直于半导体芯片的主表面的至少一个气缸基本上跨越其整个厚度延伸，所述气缸具有具有波状闭合曲线形状的横截面。
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公开(公告)号：US07692262B2
公开(公告)日：2010-04-06
申请号：US10885996
申请日：2004-07-07
Applicant: Jean-Luc Morand , Emmanuel Collard , André Lhorte
Inventor： Jean-Luc Morand , Emmanuel Collard , André Lhorte
IPC: H01L27/095 , H01L29/74
CPC classification number: H01L29/8611 , H01L27/0788 , H01L27/0814 , H01L29/872
Abstract: A vertical rectifying and protection power diode, formed in a lightly-doped semiconductor layer of a first conductivity type, resting on a heavily-doped substrate of the first conductivity type, having a first ring-shaped region, of the first conductivity type more heavily-doped than the layer and more lightly doped than the substrate, surrounding an area of the layer and extending to the substrate; and a second ring-shaped region, doped of the second conductivity type, extending at the surface of the first region and on either side thereof; a first electrode having a thin layer of a material capable of forming a Schottky diode with the layer, resting on the area of the layer and on at least a portion of the second ring-shaped region with which it forms an ohmic contact.
Abstract translation: 形成在第一导电类型的轻掺杂半导体层中的垂直整流和保护功率二极管，其位于第一导电类型的重掺杂衬底上，具有第一导电类型的第一环形区域 与该衬底相比掺杂并且比衬底更轻地掺杂，围绕该层的区域并延伸到衬底; 以及在所述第一区域的表面和其任一侧上延伸的第二导电类型的第二环形区域; 第一电极，其具有能够与所述层形成肖特基二极管的材料的薄层，搁置在所述层的区域上以及在形成欧姆接触的第二环形区域的至少一部分上。
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公开(公告)号：US20100055507A1
公开(公告)日：2010-03-04
申请号：US12552032
申请日：2009-09-01
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
CPC classification number: B81B3/007 , B81B2203/033 , H01M2/0202 , H01M8/1286
Abstract: A 3-D structure formed in a recess of a substrate delimited by walls, including a large number of rectangle parallelepipedic blades extending from the bottom of the recess to the substrate surface while being oriented perpendicularly to one another and formed in a pattern covering the whole surface of the recess, some blades being non-secant to one of the walls, each non-secant blade being connected to one of the walls by at least another perpendicular blade.
Abstract translation: 形成在由壁限定的基板的凹部中的3-D结构，其包括从凹部的底部延伸到基板表面的大量矩形平行六面体叶片，同时彼此垂直定向并以覆盖整个图案的图案形成 凹槽的表面，一些叶片非直线至一个壁，每个非割线叶片通过至少另一个垂直叶片连接到一个壁。
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公开(公告)号：US08710598B2
公开(公告)日：2014-04-29
申请号：US12552032
申请日：2009-09-01
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
IPC: H01L29/82
CPC classification number: B81B3/007 , B81B2203/033 , H01M2/0202 , H01M8/1286
Abstract: A 3-D structure formed in a recess of a substrate delimited by walls, including a large number of rectangle parallelepipedic blades extending from the bottom of the recess to the substrate surface while being oriented perpendicularly to one another and formed in a pattern covering the whole surface of the recess, some blades being non-secant to one of the walls, each non-secant blade being connected to one of the walls by at least another perpendicular blade.
Abstract translation: 形成在由壁限定的基板的凹部中的3-D结构，其包括从凹部的底部延伸到基板表面的大量矩形平行六面体叶片，同时彼此垂直定向并以覆盖整个图案的图案形成 凹槽的表面，一些叶片非直线至一个壁，每个非割线叶片通过至少另一个垂直叶片连接到一个壁。
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Patent Agency Ranking
公开(公告)号：US20100144403A1
公开(公告)日：2010-06-10
申请号：US12593967
申请日：2008-04-01
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
Abstract: An isolated monolithic electrical converter including a substrate made of a resistive material, the underside of which has two input electrodes spaced apart from each other, constituting the primary, an insulating layer on the top side of the substrate, and, on the insulating layer, at least two elements made of respectively p-doped and n-doped semiconductor thermoelectric materials electrically connected in series, the ends of the series connection constituting the secondary of the converter.
Abstract translation: 一种隔离的单片电转换器，包括由电阻材料制成的衬底，其底面具有彼此间隔开的两个输入电极，构成初级，衬底顶侧上的绝缘层，并且在绝缘层上， 由分别电连接的p掺杂和n掺杂的半导体热电材料制成的至少两个元件，串联连接的端部构成转换器的次级。
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公开(公告)号：US20060101829A1
公开(公告)日：2006-05-18
申请号：US11282830
申请日：2005-11-18
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
CPC classification number: H01L35/32 , H01L23/38 , H01L2924/0002 , H01L2924/00
Abstract: A self-cooled electronic component comprising a vertical monolithic circuit, in which the vertical monolithic circuit is electrically connected in series with a Peltier cooler so that the D.C. current flowing through the circuit supplies the cooler and in which the circuit and the cooler are placed against each other so that the cold surface of the cooler is in thermal contact with the circuit.
Abstract translation: 一种自冷却电子部件，包括垂直单片电路，其中垂直单片电路与珀尔帖冷却器串联电连接，使得流过电路的直流电流供应冷却器，并且电路和冷却器放置在其中 使得冷却器的冷表面与电路热接触。
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公开(公告)号：US20050121691A1
公开(公告)日：2005-06-09
申请号：US10763070
申请日：2004-01-22
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
IPC: H01L29/417 , H01L29/73 , H01L29/739 , H01L29/74 , H01L29/861 , H01L29/32
CPC classification number: H01L29/417 , H01L29/73 , H01L29/739 , H01L29/74 , H01L29/861
Abstract: A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially crossing the entire region with which a contact is desired to be established.
Abstract translation: 一种半导体部件，其中有源接合部基本上横跨其整个厚度垂直于半导体芯片的表面延伸。 与要连接的区域的触点由导电指状物提供，其基本上与要建立触点的整个区域交叉。
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公开(公告)号：US20050006662A1
公开(公告)日：2005-01-13
申请号：US10885996
申请日：2004-07-07
Applicant: Jean-Luc Morand , Emmanuel Collard , Andre Lhorte
Inventor： Jean-Luc Morand , Emmanuel Collard , Andre Lhorte
IPC: H01L27/07 , H01L27/08 , H01L29/47 , H01L29/861 , H01L29/872 , H01L29/74
CPC classification number: H01L29/8611 , H01L27/0788 , H01L27/0814 , H01L29/872
Abstract: A vertical rectifying and protection power diode, formed in a lightly-doped semiconductor layer of a first conductivity type, resting on a heavily-doped substrate of the first conductivity type, having a first ring-shaped region, of the first conductivity type more heavily-doped than the layer and more lightly doped than the substrate, surrounding an area of the layer and extending to the substrate; and a second ring-shaped region, doped of the second conductivity type, extending at the surface of the first region and on either side thereof; a first electrode having a thin layer of a material capable of forming a Schottky diode with the layer, resting on the area of the layer and on at least a portion of the second ring-shaped region with which it forms an ohmic contact.
Abstract translation: 形成在第一导电类型的轻掺杂半导体层中的垂直整流和保护功率二极管，其位于第一导电类型的重掺杂衬底上，具有第一导电类型的第一环形区域 与该衬底相比掺杂并且比衬底更轻地掺杂，围绕该层的区域并延伸到衬底; 以及在所述第一区域的表面和其任一侧上延伸的第二导电类型的第二环形区域; 第一电极，其具有能够与所述层形成肖特基二极管的材料的薄层，搁置在所述层的区域上以及在形成欧姆接触的第二环形区域的至少一部分上。
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公开(公告)号：US07939887B2
公开(公告)日：2011-05-10
申请号：US12632641
申请日：2009-12-07
Applicant: Jean-Luc Morand
Inventor： Jean-Luc Morand
CPC classification number: H01L29/417 , H01L29/73 , H01L29/739 , H01L29/74 , H01L29/861
Abstract: A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially crossing the entire region with which a contact is desired to be established.
Abstract translation: 一种半导体部件，其中有源接合部基本上横跨其整个厚度垂直于半导体芯片的表面延伸。 与要连接的区域的触点由导电指状物提供，其基本上与要建立触点的整个区域交叉。
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