Invention Application
US20100055851A1 PHOTORESIST COMPOSTION, METHOD FOR FORMING THIN FILM PATTERNS, AND METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING THE SAME
审中-公开
光电组合物，形成薄膜图案的方法，以及使用其制造薄膜晶体管的方法
- Patent Title: PHOTORESIST COMPOSTION, METHOD FOR FORMING THIN FILM PATTERNS, AND METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING THE SAME
- Patent Title (中): 光电组合物，形成薄膜图案的方法，以及使用其制造薄膜晶体管的方法
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Application No.: US12389031Application Date: 2009-02-19
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Publication No.: US20100055851A1Publication Date: 2010-03-04
- Inventor: Hi-Kuk Lee , Sang-Hyun Yun , Jung-In Park , Woo-Seok Jeon , Pil-Soon Hong , Doek-Man Kang , Sae-Tae Oh , Chang-Ik Lee
- Applicant: Hi-Kuk Lee , Sang-Hyun Yun , Jung-In Park , Woo-Seok Jeon , Pil-Soon Hong , Doek-Man Kang , Sae-Tae Oh , Chang-Ik Lee
- Applicant Address: KR Suwon-si JP Tokyo
- Assignee: Samsung Electronics Co., Ltd.,AZ Electronic Materials (Japan) K.K.
- Current Assignee: Samsung Electronics Co., Ltd.,AZ Electronic Materials (Japan) K.K.
- Current Assignee Address: KR Suwon-si JP Tokyo
- Priority: KR10-2008-0085861 20080901
- Main IPC: H01L21/336
- IPC: H01L21/336 ; C08F118/16 ; G03F7/00
Abstract:
The present invention relates to a photoresist composition that comprises a resin that is represented by Formula 1, a method for forming a thin film pattern, and a method for manufacturing a thin film transistor array panel by using the same. Herein, R is a methylene group, and n is an integer of 1 or more.
Information query
IPC分类:
