Invention Application
- Patent Title: METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12208862Application Date: 2008-09-11
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Publication No.: US20100059857A1Publication Date: 2010-03-11
- Inventor: Edmund Riedl , Ivan Nikitin , Johannes Lodermeyer , Robert Bergmann , Karsten Guth
- Applicant: Edmund Riedl , Ivan Nikitin , Johannes Lodermeyer , Robert Bergmann , Karsten Guth
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/60 ; H01L23/495
Abstract:
A method of fabricating a semiconductor device. One embodiment provides a metal carrier. A semiconductor chip is provided. A porous layer is produced at a surface of at least one of the carrier and the semiconductor chip. The semiconductor chip is placed on the carrier. The resulting structure is heated until the semiconductor chip is attached to the carrier.
Public/Granted literature
- US08603864B2 Method of fabricating a semiconductor device Public/Granted day:2013-12-10
Information query
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