Invention Application
- Patent Title: Method and Apparatus for Gating Photomask Contamination
- Patent Title (中): 用于门控光掩模污染的方法和装置
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Application No.: US12205168Application Date: 2008-09-05
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Publication No.: US20100062348A1Publication Date: 2010-03-11
- Inventor: Chih-Wing Chang
- Applicant: Chih-Wing Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A photomask is provided that includes a transparent substrate, a mask pattern formed on a first area of the substrate, the mask pattern having one or more openings that allow light radiation to pass through and having one or more features formed of a first material, and an inspection structure formed on a second area of the substrate different from the first area, the inspection structure being formed of a second material different from the first material.
Public/Granted literature
- US08142959B2 Method and apparatus for gating photomask contamination Public/Granted day:2012-03-27
Information query
