发明申请
- 专利标题： Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions
- 专利标题（中）： 在半导体结构形成过程中利用微波辐射的方法
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申请号： US12208886申请日： 2008-09-11
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公开(公告)号： US20100062562A1公开(公告)日： 2010-03-11
- 发明人: John Smythe , Bhaskar Srinivasan , Ming Zhang
- 申请人： John Smythe , Bhaskar Srinivasan , Ming Zhang
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/336 ; H01L21/20 ; H01L21/263
摘要：
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
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