发明申请
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12395875申请日： 2009-03-02
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公开(公告)号： US20100062599A1公开(公告)日： 2010-03-11
- 发明人: Kazutoyo Takano , Junichi Murakami , Tadaharu Minato
- 申请人： Kazutoyo Takano , Junichi Murakami , Tadaharu Minato
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2008-228084 20080905
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A method for manufacturing a semiconductor device includes the steps of forming a P-type region on a surface of a semiconductor substrate, forming at least one Al electrode on the P-type region, forming an interlayer film in contact with the at least one Al electrode, the interlayer film being of a material which is less reactive with Si than is Al, and forming a semi-insulating film on the interlayer film, the semi-insulating film containing Si.
公开/授权文献
- US08377832B2 Method for manufacturing semiconductor device 公开/授权日：2013-02-19
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