发明申请
- 专利标题： DRY ETCHING METHOD
- 专利标题（中）： 干蚀刻方法
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申请号： US12594966申请日： 2008-04-10
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公开(公告)号： US20100062606A1公开(公告)日： 2010-03-11
- 发明人: Yasuhiro Morikawa , Koukou Suu
- 申请人： Yasuhiro Morikawa , Koukou Suu
- 申请人地址： JP Kanagawa
- 专利权人： ULVAC, INC.
- 当前专利权人： ULVAC, INC.
- 当前专利权人地址： JP Kanagawa
- 优先权： JP2007-103512 20070411
- 国际申请： PCT/JP2008/057066 WO 20080410
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
The object of the present invention is to provide a dry etching method by which generation of a notch in an insulating layer can be suppressed and highly-accurate microfabrication can be realized. In a dry etching method according to the present invention, a substrate in which a semiconductor layer is formed on an insulating layer formed of a silicon oxide is prepared, a through-hole is formed in the semiconductor layer, and a resin film is formed on side walls of the through-hole and a recessed portion while forming the recessed portion in the insulating layer by etching an area in which the insulating layer is exposed via the through-hole. By forming the resin film on the side wall of the recessed portion, the side wall of the recessed portion is protected from collision of ions in plasma and generation of a notch in the recessed-portion side wall is suppressed. Furthermore, by forming the resin film on the side wall of the through-hole, the side wall of the through-hole is protected from the collision of ions in plasma and a hole shape of the through-hole is prevented from fluctuating.
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