公开(公告)号：US09343207B2

公开(公告)日：2016-05-17

申请号：US14369659

申请日：2013-08-27

申请人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

发明人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： H01C7/10 ,  H01C7/108 ,  H01L45/00 ,  C23C14/00 ,  C23C14/08 ,  H01C17/06 ,  H01C17/12

CPC分类号： H01C7/108 ,  C23C14/0036 ,  C23C14/08 ,  H01C17/06 ,  H01C17/12 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

摘要翻译： 提供一种电阻变化器件，可以免受过电流的影响，而不会增大器件尺寸。 根据本实施例的电阻改变装置1包括下电极层3，上电极层6，第一金属氧化物层51，第二金属氧化物层52和限流层4.第一金属氧化物层51 设置在下电极层3和上电极层6之间，并且具有第一电阻率。 第二金属氧化物层52设置在第一金属氧化物层51和上电极层6之间，并且具有比第一电阻率高的第二电阻率。 限流层4设置在下电极层3和第一金属氧化物层51之间，并且具有比第一电阻率高的第三电阻率并且低于第二电阻率。

公开(公告)号：US20150056373A1

公开(公告)日：2015-02-26

申请号：US14348006

申请日：2013-07-25

申请人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

发明人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/00 ,  C23C16/44 ,  H01J37/34 ,  C23C16/455

CPC分类号： C23C14/0063 ,  C23C14/0068 ,  C23C14/083 ,  C23C16/4412 ,  C23C16/455 ,  H01J37/32449 ,  H01J37/34 ,  H01J37/3411 ,  H01J2237/006

摘要： [Object] To provide a deposition method and a deposition apparatus capable of forming a metal compound layer having desired film characteristics uniformly in a substrate surface.[Solving Means] A deposition method according to an embodiment of the present invention includes evacuating an inside of a vacuum chamber 10 having a deposition chamber 101 formed inside a cylindrical partition wall 20 and an exhaust chamber 102 formed outside the partition wall 20, via an exhaust line 50 connected to the exhaust chamber 102. A process gas containing a reactive gas is introduced into the exhaust chamber 102. With the deposition chamber 101 being maintained at a lower pressure than the exhaust chamber 102, the process gas is supplied to the deposition chamber 101 via a gas flow passage 80 between the partition wall 20 and the vacuum chamber 10.

摘要翻译： 本发明提供能够在基板表面上均匀地形成具有期望的膜特性的金属化合物层的沉积方法和沉积装置。 [解决方案]根据本发明的实施方式的沉积方法包括将具有形成在圆筒形分隔壁20内的沉积室101和形成在分隔壁20外部的排气室102的真空室10的内部经由 连接到排气室102的排气管路50.将包含反应性气体的处理气体引入排气室102.在沉积室101保持在比排气室102低的压力下，将处理气体供应到沉积物 室101经由分隔壁20和真空室10之间的气体流路80。

公开(公告)号：US08591655B2

公开(公告)日：2013-11-26

申请号：US10612149

申请日：2003-07-03

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/409 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45589 ,  C30B25/02 ,  C30B25/14 ,  C30B29/60

摘要： A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

摘要翻译： 用于确保形成在基板表面上的膜的性质的均匀平面分布的薄膜形成装置具有将气体混合物从气体混合室24供应到喷淋头25的气体供应口24a。该端口是 布置在气体混合室的底面的周边部分，使得气体混合物从头部的上周边区域朝向其中心流动。 将成膜室3内产生的废气排出的排气口32配置在低于气缸台31的高度的位置，在成膜期间将排气朝着室3的侧壁排出，排出废气 通过排气口。 舞台31被设计成上下移动以调节淋浴头25和基底S之间的距离。

公开(公告)号：US20130224381A1

公开(公告)日：2013-08-29

申请号：US13876756

申请日：2011-09-15

申请人： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

发明人： Takeshi Masuda ,  Takuya Ideno ,  Masahiko Kajinuma ,  Nobuhiro Odajima ,  Yohei Uchida ,  Koukou Suu

IPC分类号： C23C16/44

CPC分类号： C23C16/44 ,  C23C16/4401 ,  H01L21/02197 ,  H01L21/02271

摘要： In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2) is conveyed into a chamber (51), dummy processing gas is supplied to the dummy substrate (S2), a product substrate (S3) is conveyed into the chamber (51), and raw material gas different from the dummy processing gas, and containing therein metal material for manufacturing a thin film with the Metal Organic Chemical Vapor Deposition (MOCVD) method, is supplied to the product substrate (S3). Since the raw material gas is not used as dummy processing gas, the amount of metal material to be used can be inhibited, and a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved.

摘要翻译： 为了提供薄膜制造方法和薄膜制造装置，其中可以以低成本制造具有良好重复性的薄膜，并且以节省资源的方式，将虚设基板（S2）输送到室 （51）中，将假处理气体供给到虚拟基板（S2），将产品基板（S3）输送到室（51）中，将原料气体与虚拟处理气体不同，并且内装有用于制造的金属材料 将具有金属有机化学气相沉积（MOCVD）方法的薄膜供应到产品基板（S3）。 由于不使用原料气体作为虚拟处理气体，所以能够抑制金属材料的使用量，能够以低成本制造具有良好重复性的薄膜，并且以节省资源的方式。

公开(公告)号：US20120171869A1

公开(公告)日：2012-07-05

申请号：US13386213

申请日：2010-08-12

申请人： Yasuhiro Morikawa ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Koukou Suu

IPC分类号： H01L21/302

CPC分类号： H01L21/30655

摘要： There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.

摘要翻译： 提供了一种蚀刻方法，其可以在由硅制成的待处理物体中形成具有期望的纵横比和形状的沟槽或通孔。 蚀刻方法包括：含卤化氢的气体基蚀刻步骤，通过将含卤化氢的气体引入真空室来蚀刻硅衬底; 含氟气体蚀刻步骤，通过将真空室中引入含氟气体来蚀刻硅衬底; 通过溅射固体材料在硅衬底上形成保护膜的保护膜形成步骤; 以及通过对基板电极施加射频偏置功率来去除部分保护膜的保护膜去除步骤。 依次重复进行含氟气体蚀刻工序，保护膜形成工序和保护膜除去工序。

公开(公告)号：US08153926B2

公开(公告)日：2012-04-10

申请号：US12750877

申请日：2010-03-31

申请人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

发明人： Yasuhiro Morikawa ,  Toshio Hayashi ,  Koukou Suu

IPC分类号： B23K10/00

CPC分类号： H01L21/30655 ,  B81C1/00595 ,  B81C2201/014 ,  H01J37/3255 ,  H01J2237/334

摘要： An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence.

摘要翻译： 蚀刻方法和蚀刻系统适于产生掩模的高蚀刻选择性，优异的各向异性轮廓和大的蚀刻深度。 根据本发明的蚀刻系统包括相对于真空室中的基板电极布置并且在电位方面保持为浮置状态的浮动电极，布置在浮置电极的面向基板电极的一侧的材料 形成抗蚀刻膜和用于间歇地向浮动电极施加高频电力的控制单元。 根据本发明的蚀刻方法使用布置在与基板电极相对的浮动电极侧的材料以形成作为目标的抗蚀刻膜，并且仅将稀有气体作为主要气体，并且适于重复形成膜的步骤 通过向浮动电极施加高频电力而通过溅射在衬底上，以及通过将高频电力施加到浮动电极并以预定顺序将蚀刻气体引入真空室中而随后蚀刻衬底的步骤。

公开(公告)号：US20100314599A1

公开(公告)日：2010-12-16

申请号：US12742602

申请日：2008-11-13

申请人： Shin Kikuchi ,  Yutaka Nishioka ,  Isao Kimura ,  Takehito Jimbo ,  Koukou Suu

发明人： Shin Kikuchi ,  Yutaka Nishioka ,  Isao Kimura ,  Takehito Jimbo ,  Koukou Suu

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： C23C14/046 ,  C23C14/0623 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

摘要： A chalcogenide film of the invention is formed by a sputtering within a contact hole formed in an insulating layer on a substrate, and is made of a chalcogen compound including a melting-point lowering material that lowers a melting point.

摘要翻译： 本发明的硫族化物膜是通过在形成于基板上的绝缘层中的接触孔内的溅射形成的，并且由包含降低熔点的熔点降低材料的硫属化合物构成。

公开(公告)号：US06933010B2

公开(公告)日：2005-08-23

申请号：US10466324

申请日：2002-12-03

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： B01F3/02 ,  B01F5/02 ,  B01J4/00 ,  B01J10/02 ,  B01J19/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45502 ,  B01F3/02 ,  B01F5/0256 ,  B01F2215/0427 ,  B01J4/001 ,  B01J10/02 ,  B01J19/247 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/4558 ,  C23C16/4585 ,  H01L21/67017

摘要： A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

摘要翻译： 一种薄膜制造系统，其中用于将基板放置在其上的载物台设置在真空反应器内，并且将用于将成膜气体供应到真空反应器的顶面上的中心区域的气体头设置为使得气体头 反对舞台。 圆柱形套筒构件设置成与舞台的侧壁紧密接触以围绕舞台的周边。 该台架的高度可以在形成在载物台下方并连接到真空排出装置的第二空间的体积大于形成在载物台上方的第一空间的体积的位置上， 从第一空间各向同性地排出，而不会通过套筒构件和构成反应器的内壁面之间的间隙引起任何对流。

公开(公告)号：US06521105B2

公开(公告)日：2003-02-18

申请号：US09909852

申请日：2001-07-23

申请人： Noriaki Tani ,  Kazuhiko Saito ,  Koukou Suu

发明人： Noriaki Tani ,  Kazuhiko Saito ,  Koukou Suu

IPC分类号： C23C1434

CPC分类号： H01J37/3438 ,  C23C14/088 ,  H01J37/34

摘要： In order to provide technology where film deposition speed and Sr/Ti composition ratio is constant even when forming dielectric films consecutively on a plurality of substrates using sputtering techniques, a sputtering apparatus is provided with an opposing electrode located about the periphery of a mounting table at an inner bottom surface of a vacuum chamber. Further, a multiplicity of holes are formed at the surface of the opposing electrode so that the surface area of the opposing electrode is large. Sputtering dielectric material becomes affixed to the surface of the opposing electrode so that a dielectric film is formed at this surface. The charge density of charge distributed at the surface of the opposing electrode is therefore small compared with the related art even when positive charge is distributed. The potential of the opposing electrode surface can therefore be kept substantially at earth potential.

摘要翻译： 即使在使用溅射技术在多个基板上连续形成介电膜的情况下，为了提供成膜速度和Sr / Ti组成比恒定的技术，溅射装置设置有位于安装台的周围的相对电极 真空室的内底面。 此外，在相对电极的表面形成多个孔，使得相对电极的表面积较大。 溅射电介质材料固定到相对电极的表面，使得在该表面形成电介质膜。 因此即使在正电荷分布的情况下，分散在对置电极的表面的电荷的电荷密度也比现有技术小。 因此，相对电极表面的电位可以基本上保持在地电位。

公开(公告)号：US08262798B2

公开(公告)日：2012-09-11

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。