发明申请
- 专利标题: Horizontal Dual In-line Memory Modules
- 专利标题(中): 水平双列直插式内存模块
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申请号: US12209019申请日: 2008-09-11
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公开(公告)号: US20100062621A1公开(公告)日: 2010-03-11
- 发明人: MICHAEL BRUENNERT , Peter Gregorius , Georg Braun , Andreas Gartner , Hermann Ruckerbauer , George William Alexander , Johannes Stecker
- 申请人: MICHAEL BRUENNERT , Peter Gregorius , Georg Braun , Andreas Gartner , Hermann Ruckerbauer , George William Alexander , Johannes Stecker
- 主分类号: H05K1/00
- IPC分类号: H05K1/00
摘要:
Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.
公开/授权文献
- US07771206B2 Horizontal dual in-line memory modules 公开/授权日:2010-08-10
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