发明申请
- 专利标题: High density trench field effect transistor
- 专利标题(中): 高密度沟槽场效应晶体管
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申请号: US12211654申请日: 2008-09-16
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公开(公告)号: US20100065904A1公开(公告)日: 2010-03-18
- 发明人: James Pan , Scott L. Hunt , Dean E. Probst , Hossein Paravi
- 申请人: James Pan , Scott L. Hunt , Dean E. Probst , Hossein Paravi
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor structure comprises trenches extending into a semiconductor region. Portions of the semiconductor region extend between adjacent trenches forming mesa regions. A gate electrode is in each trench. Well regions of a first conductivity type extend in the semiconductor region between adjacent trenches. Source regions of a second conductivity type are in the well regions. Heavy body regions of the first conductivity type are in the well regions. The source regions and the heavy body regions are adjacent trench sidewalls, and the heavy body regions extend over the source regions along the trench sidewalls to a top surface of the mesa regions.
公开/授权文献
- US08278702B2 High density trench field effect transistor 公开/授权日:2012-10-02