Invention Application
- Patent Title: Biasing a Transistor Out of a Supply Voltage Range
- Patent Title (中): 将晶体管偏置在电源电压范围之外
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Application No.: US12388329Application Date: 2009-02-18
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Publication No.: US20100066438A1Publication Date: 2010-03-18
- Inventor: Domagoj Siprak , Marc Tiebout , Peter Baumgartner
- Applicant: Domagoj Siprak , Marc Tiebout , Peter Baumgartner
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: G05F3/02
- IPC: G05F3/02 ; G11C5/14
Abstract:
The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
Public/Granted literature
- US07897956B2 Biasing a transistor out of a supply voltage range Public/Granted day:2011-03-01
Information query
IPC分类:
