发明申请
- 专利标题: Semiconductor Device and Manufacturing Method of the Same
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12564603申请日: 2009-09-22
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公开(公告)号: US20100072583A1公开(公告)日: 2010-03-25
- 发明人: Yoshiaki Oikawa , Shingo Eguchi
- 申请人: Yoshiaki Oikawa , Shingo Eguchi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP2008-246083 20080925
- 主分类号: H01L23/60
- IPC分类号: H01L23/60 ; H01L23/02
摘要:
With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.
公开/授权文献
- US08102034B2 Semiconductor device and manufacturing method of the same 公开/授权日:2012-01-24
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