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公开(公告)号:US09929220B2
公开(公告)日:2018-03-27
申请号:US12651734
申请日:2010-01-04
申请人: Shunpei Yamazaki , Masahiro Katayama , Shingo Eguchi , Yoshiaki Oikawa , Ami Nakamura , Satoshi Seo , Kaoru Hatano
发明人: Shunpei Yamazaki , Masahiro Katayama , Shingo Eguchi , Yoshiaki Oikawa , Ami Nakamura , Satoshi Seo , Kaoru Hatano
IPC分类号: H01L27/32 , H05B33/02 , H05B33/04 , H05B33/12 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/52
CPC分类号: H01L27/3246 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L29/7869 , H01L51/003 , H01L51/52 , H01L51/524 , H01L51/5253 , H01L2251/5338 , H05B33/02 , H05B33/04 , H05B33/12
摘要: Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.
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公开(公告)号:US08803298B2
公开(公告)日:2014-08-12
申请号:US13354635
申请日:2012-01-20
申请人: Yoshiaki Oikawa , Shingo Eguchi
发明人: Yoshiaki Oikawa , Shingo Eguchi
IPC分类号: H01L23/02
CPC分类号: H01L23/60 , H01L23/3107 , H01L23/66 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/3025 , H01L2924/00
摘要: With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.
摘要翻译: 通过使用形成在半导体集成电路的顶部或底部的导电屏蔽,防止由静电放电引起的半导体集成电路的静电击穿(电路的故障或半导体元件的损坏),并且充分的通信 获得能力。 通过使用夹持半导体集成电路的一对绝缘体,可以提供厚度和尺寸减小并且具有耐外部应力的高度可靠的半导体器件。 可以以高产率制造半导体器件,同时在制造过程中防止由外部应力或静电放电引起的形状和特性的缺陷。
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公开(公告)号:US08659025B2
公开(公告)日:2014-02-25
申请号:US13613215
申请日:2012-09-13
IPC分类号: H01L27/15
CPC分类号: H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要: A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译: 制造具有高可靠性和操作性能的半导体器件,而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能,选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。
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公开(公告)号:US08133749B2
公开(公告)日:2012-03-13
申请号:US12429201
申请日:2009-04-24
申请人: Shingo Eguchi
发明人: Shingo Eguchi
IPC分类号: H01L21/84
CPC分类号: H01L23/562 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/293 , H01L23/295 , H01L23/3114 , H01L2221/6835 , H01L2924/0002 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要: In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.
摘要翻译: 在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中,在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。 通过针对外部应力设置抗冲击层和用于扩散冲击的冲击扩散层,减小了施加到每单位面积的半导体集成电路的力,从而保护了半导体集成电路。 冲击扩散层优选具有低的弹性模量和高的断裂模量。
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公开(公告)号:US20120044445A1
公开(公告)日:2012-02-23
申请号:US13207766
申请日:2011-08-11
申请人: Yohei MONMA , Hiroki ADACHI , Shingo EGUCHI , Saki OBANA , Koji MORIYA , Shuji FUKAI
发明人: Yohei MONMA , Hiroki ADACHI , Shingo EGUCHI , Saki OBANA , Koji MORIYA , Shuji FUKAI
IPC分类号: G02F1/1337 , H01L33/08 , G02F1/1339
CPC分类号: G02F1/1339 , G02F1/1345
摘要: The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa·m1/2] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1×10−4 wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm2].
摘要翻译: 可以通过以下结构来实现该目的。 将断裂韧性值大于等于1.5 [MPa·m1 / 2]的材料用于在其间保持液晶材料的基底基板和对置基板; 含有小于或等于1×10 -4重量%的液晶污染物的第一密封剂设置成与液晶材料接触并且无缝地包围液晶材料; 设置第二密封剂以包围第一密封剂; 并且使用第一密封剂和第二密封剂在其间保持液晶材料的基板和对向基板以大于或等于1 [N / mm 2]的粘合强度粘合。
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公开(公告)号:US20110001146A1
公开(公告)日:2011-01-06
申请号:US12824795
申请日:2010-06-28
申请人: Shunpei Yamazaki , Kaoru Hatano , Masahiro Katayama , Shingo Eguchi , Yoshiaki Oikawa , Ami Nakamura
发明人: Shunpei Yamazaki , Kaoru Hatano , Masahiro Katayama , Shingo Eguchi , Yoshiaki Oikawa , Ami Nakamura
IPC分类号: H01L33/00
CPC分类号: H01L51/5246 , H01L27/14609 , H01L27/1463 , H01L27/14689 , H01L27/322 , H01L27/3244 , H01L27/3276 , H01L33/08 , H01L33/48 , H01L51/5243 , H01L51/5253 , H01L51/5278 , H01L2227/323 , H01L2251/5338 , H01L2251/5361 , H05B33/04 , H05B33/10 , H05B33/22
摘要: It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.
摘要翻译: 本发明的目的是以简单的方式提供高可靠性的柔性发光装置。 此外,其目的是提供一种每个安装有发光装置的电子装置或照明装置。 通过使用具有以下结构的发光装置,可以获得高可靠性的发光装置:包括发光元件的元件部分介于具有柔性的基板和相对于 可见光和金属基板; 并且设置在元件部分之上和之下的绝缘层在元件部分的外周彼此接触以密封元件部分。 此外,通过使用具有这种结构的发光装置安装电子装置或照明装置,可以获得具有高可靠性的电子装置或照明装置。
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公开(公告)号:US07771314B2
公开(公告)日:2010-08-10
申请号:US11659294
申请日:2005-12-02
IPC分类号: B60W10/04
CPC分类号: B60T7/02 , B60W10/02 , B60W10/103 , B60W10/184 , B60W30/18045 , B60W2510/104 , B60W2540/10 , B60Y2200/221 , F02D11/02 , F02D29/02 , F16D31/02 , F16D48/02 , F16D48/066 , F16D2500/1112 , F16D2500/3069 , F16D2500/30825 , F16D2500/3101 , F16D2500/3102 , F16D2500/3111 , F16D2500/3112 , F16D2500/3144 , F16D2500/3146 , F16D2500/3166 , F16D2500/5075 , F16D2500/70235 , F16D2500/7027 , F16D2500/70454 , F16H47/02 , F16H59/06 , F16H59/44 , F16H59/54 , F16H61/0246 , F16H2059/0234 , F16H2059/065 , G05G1/46 , G05G5/24 , Y10T477/6203 , Y10T477/677 , Y10T477/679
摘要: A control apparatus for a tractor or wheel loader includes a speed change sensor that detects the step-on amount of a speed change pedal, an actuator that regulates a swash plate angle of a hydraulic pump based on the detection value of the speed change sensor, a transmission output unit rotation sensor that detects the revolution speed of an output shalt, and a control unit. When the speed change pedal is not stepped on, a braking force is applied to travel wheels and both of a forward drive clutch and a reverse drive clutch are disengaged. When a transmission drive output detected with the transmission output unit rotation sensor is not more than a fixed forward or reverse drive switching speed, either the forward drive clutch or the reverse drive clutch is engaged as the speed change pedal is stepped on.
摘要翻译: 用于拖拉机或轮式装载机的控制装置包括检测变速踏板的踏入量的变速传感器,基于变速传感器的检测值来调节液压泵的斜盘角度的致动器, 检测输出转速的变速器输出单元旋转传感器和控制单元。 当没有踩踏速度踏板时,对行驶轮施加制动力,并且前进驱动离合器和反向驱动离合器都被分离。 当利用变速器输出单元旋转传感器检测到的变速器驱动输出不大于固定的正向或反向驱动切换速度时,随着变速踏板被踩踏,前进驱动离合器或反向驱动离合器被接合。
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公开(公告)号:US20090302456A1
公开(公告)日:2009-12-10
申请号:US12476491
申请日:2009-06-02
申请人: Yoshiaki OIKAWA , Hironobu SHOJI , Shingo EGUCHI
发明人: Yoshiaki OIKAWA , Hironobu SHOJI , Shingo EGUCHI
CPC分类号: H01L27/0248 , H01L23/60 , H01L27/13 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要: To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.
摘要翻译: 为了提供一种制造半导体器件的简单方法,其中由于静电放电引起的特性劣化减少,多个元件层各自具有半导体集成电路和天线被密封在第一绝缘体和第二绝缘体之间; 形成具有形成在第一绝缘体的表面上的第一导电层,第一绝缘体,元件层,第二绝缘体和形成在第二绝缘体的表面上的第二导电层的层状结构; 并且第一绝缘体和第二绝缘体熔化,由此将分层结构分割为包括至少一个半导体集成电路和天线中的一个。
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公开(公告)号:US20090017599A1
公开(公告)日:2009-01-15
申请号:US12232049
申请日:2008-09-10
申请人: Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
发明人: Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号: H01L21/30
CPC分类号: H01L21/67132 , H01L21/02244 , H01L21/02252 , H01L21/67092 , H01L21/707 , H01L27/1266
摘要: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
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公开(公告)号:US07456911B2
公开(公告)日:2008-11-25
申请号:US09925486
申请日:2001-08-10
申请人: Shingo Eguchi , Rumo Satake
发明人: Shingo Eguchi , Rumo Satake
IPC分类号: G02F1/136
CPC分类号: G02F1/136227 , G02F1/134336 , G02F1/136213 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627
摘要: An unstable factor that the orientation of liquid crystal is fixed and left after a drive power source is turned off is reduced, preferable display quality is realized, and long term reliability is improved. After the drive power source is turned off, in order to block an electric field produced by charges left in a first electrode (485), a second electrode 492 is provided to overlap the first electrode. The first electrode is overlapped at 70% or more of its area with the second electrode. In addition, when the first electrode is used as an electrode composing a retaining capacitor 505, the retaining capacitor is overlapped at 90% or more of its area with the second electrode.
摘要翻译: 在驱动电源关闭之后液晶的取向固定留下的不稳定因素降低,实现优选的显示质量,提高长期可靠性。 在驱动电源关闭之后,为了阻止留在第一电极(485)中的电荷产生的电场,提供第二电极492以与第一电极重叠。 第一电极与第二电极重叠在其面积的70%以上。 此外,当第一电极用作构成保持电容器505的电极时,保持电容器与第二电极重叠在其面积的90%以上。
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