Semiconductor device and manufacturing method of the same
    2.
    发明授权
    Semiconductor device and manufacturing method of the same 有权
    半导体器件及其制造方法相同

    公开(公告)号:US08803298B2

    公开(公告)日:2014-08-12

    申请号:US13354635

    申请日:2012-01-20

    IPC分类号: H01L23/02

    摘要: With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

    摘要翻译: 通过使用形成在半导体集成电路的顶部或底部的导电屏蔽,防止由静电放电引起的半导体集成电路的静电击穿(电路的故障或半导体元件的损坏),并且充分的通信 获得能力。 通过使用夹持半导体集成电路的一对绝缘体,可以提供厚度和尺寸减小并且具有耐外部应力的高度可靠的半导体器件。 可以以高产率制造半导体器件,同时在制造过程中防止由外部应力或静电放电引起的形状和特性的缺陷。

    Semiconductor device and method for manufacturing the same
    4.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08133749B2

    公开(公告)日:2012-03-13

    申请号:US12429201

    申请日:2009-04-24

    申请人: Shingo Eguchi

    发明人: Shingo Eguchi

    IPC分类号: H01L21/84

    摘要: In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.

    摘要翻译: 在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中,在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。 通过针对外部应力设置抗冲击层和用于扩散冲击的冲击扩散层,减小了施加到每单位面积的半导体集成电路的力,从而保护了半导体集成电路。 冲击扩散层优选具有低的弹性模量和高的断裂模量。

    Liquid Crystal Device and Manufacturing Method Thereof
    5.
    发明申请
    Liquid Crystal Device and Manufacturing Method Thereof 审中-公开
    液晶装置及其制造方法

    公开(公告)号:US20120044445A1

    公开(公告)日:2012-02-23

    申请号:US13207766

    申请日:2011-08-11

    CPC分类号: G02F1/1339 G02F1/1345

    摘要: The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa·m1/2] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1×10−4 wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm2].

    摘要翻译: 可以通过以下结构来实现该目的。 将断裂韧性值大于等于1.5 [MPa·m1 / 2]的材料用于在其间保持液晶材料的基底基板和对置基板; 含有小于或等于1×10 -4重量%的液晶污染物的第一密封剂设置成与液晶材料接触并且无缝地包围液晶材料; 设置第二密封剂以包围第一密封剂; 并且使用第一密封剂和第二密封剂在其间保持液晶材料的基板和对向基板以大于或等于1 [N / mm 2]的粘合强度粘合。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20090302456A1

    公开(公告)日:2009-12-10

    申请号:US12476491

    申请日:2009-06-02

    IPC分类号: H01L23/12 H01L21/58

    摘要: To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

    摘要翻译: 为了提供一种制造半导体器件的简单方法,其中由于静电放电引起的特性劣化减少,多个元件层各自具有半导体集成电路和天线被密封在第一绝缘体和第二绝缘体之间; 形成具有形成在第一绝缘体的表面上的第一导电层,第一绝缘体,元件层,第二绝缘体和形成在第二绝缘体的表面上的第二导电层的层状结构; 并且第一绝缘体和第二绝缘体熔化,由此将分层结构分割为包括至少一个半导体集成电路和天线中的一个。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07456911B2

    公开(公告)日:2008-11-25

    申请号:US09925486

    申请日:2001-08-10

    IPC分类号: G02F1/136

    摘要: An unstable factor that the orientation of liquid crystal is fixed and left after a drive power source is turned off is reduced, preferable display quality is realized, and long term reliability is improved. After the drive power source is turned off, in order to block an electric field produced by charges left in a first electrode (485), a second electrode 492 is provided to overlap the first electrode. The first electrode is overlapped at 70% or more of its area with the second electrode. In addition, when the first electrode is used as an electrode composing a retaining capacitor 505, the retaining capacitor is overlapped at 90% or more of its area with the second electrode.

    摘要翻译: 在驱动电源关闭之后液晶的取向固定留下的不稳定因素降低,实现优选的显示质量,提高长期可靠性。 在驱动电源关闭之后,为了阻止留在第一电极(485)中的电荷产生的电场,提供第二电极492以与第一电极重叠。 第一电极与第二电极重叠在其面积的70%以上。 此外,当第一电极用作构成保持电容器505的电极时,保持电容器与第二电极重叠在其面积的90%以上。