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发明申请
US20100072618A1 Semiconductor Device and Method of Forming a Wafer Level Package with Bump Interconnection 有权
半导体器件和形成具有凹凸互连的晶片级封装的方法

Semiconductor Device and Method of Forming a Wafer Level Package with Bump Interconnection
摘要：
A semiconductor device is made by providing a metal substrate for supporting the semiconductor device. Solder bumps are connected to the substrate. In one embodiment, a conductive material is deposited over the substrate and is reflowed to form the solder bumps. A semiconductor die is mounted to the substrate using a die attach adhesive. The semiconductor die has a plurality of contact pads formed over a surface of the semiconductor die. An encapsulant material is deposited over the solder bumps and the semiconductor die. The encapsulant is etched to expose the contact pads of the semiconductor die. A first redistribution layer (RDL) is formed over the encapsulant to connect each contact pad of the semiconductor die to one of the solder bumps. The substrate is removed to expose the die attach adhesive and a bottom surface of the solder bumps.
摘要（中）：

通过设置用于支撑半导体器件的金属基板来制造半导体器件。 焊接凸块连接到基板。 在一个实施例中，导电材料沉积在衬底上并被回流以形成焊料凸块。 使用芯片附着粘合剂将半导体管芯安装到基板上。 半导体管芯具有形成在半导体管芯的表面上的多个接触焊盘。 在焊料凸块和半导体管芯上沉积密封材料。 蚀刻密封剂以暴露半导体管芯的接触焊盘。 第一再分配层（RDL）形成在密封剂上方以将半导体管芯的每个接触焊盘连接到焊料凸块之一。 去除衬底以暴露芯片附着粘合剂和焊料凸块的底表面。

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