公开(公告)号：US09390991B2

公开(公告)日：2016-07-12

申请号：US13346415

申请日：2012-01-09

申请人： Guruprasad G. Badakere ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay

发明人： Guruprasad G. Badakere ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay

IPC分类号： H01L23/31 ,  H01L23/58 ,  H01L23/528 ,  H01L23/00 ,  H01L21/683 ,  H01L21/56

CPC分类号： H01L24/02 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/3185 ,  H01L23/528 ,  H01L23/5286 ,  H01L23/585 ,  H01L24/05 ,  H01L24/13 ,  H01L24/18 ,  H01L24/19 ,  H01L24/82 ,  H01L24/96 ,  H01L2224/02315 ,  H01L2224/02371 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05024 ,  H01L2224/12105 ,  H01L2224/13026 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00

摘要： A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive THVs are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.

摘要翻译： 半导体管芯具有在其有源表面上形成的有源电路。 接触焊盘形成在半导体管芯的有源表面上并耦合到有源电路。 在半导体管芯的周围形成管芯延伸区域。 导电THV形成在芯片延伸区域中。 晶片级导电平面或环形成在有源表面的中心区域上。 导电平面或环连接到第一接触焊盘以向有源电路提供第一电源电位，并且电连接到第一导电THV。 导电环部分地围绕导电平面或环的周边形成并且连接到第二接触焊盘，以向有源电路提供第二电源电位。 导电环电连接到第二THV。

公开(公告)号：US08546189B2

公开(公告)日：2013-10-01

申请号：US12410213

申请日：2009-03-24

申请人： Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Henry D. Bathan ,  Jeffrey D. Punzalan ,  Dioscoro A. Merilo

发明人： Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Henry D. Bathan ,  Jeffrey D. Punzalan ,  Dioscoro A. Merilo

IPC分类号： H01L23/52 ,  H01L21/00

CPC分类号： H01L23/49811 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/24 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24145 ,  H01L2224/24998 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2224/83005 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.

摘要翻译： 通过在铜载体上形成焊料凸块制成半导体器件。 在铜载体中形成焊接捕获压痕以接收焊料凸块。 使用芯片附着粘合剂将半导体管芯安装到铜载体上。 半导体管芯具有形成在其有源表面上的接触焊盘。 封装剂沉积在铜载体，焊料凸块和半导体芯片上。 去除一部分密封剂以暴露焊料凸块和接触垫。 在密封剂上形成导电层以连接焊料凸块和接触焊盘。 导电层作为再分配层工作，以将电信号从焊料凸块路由到接触焊盘。 铜载体被去除。 在导电层和密封剂之上形成绝缘层。 多个半导体器件可以堆叠并通过焊料凸块电连接。

公开(公告)号：US08518749B2

公开(公告)日：2013-08-27

申请号：US12489177

申请日：2009-06-22

申请人： Frederick R. Dahilig ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Dioscoro A. Merilo

发明人： Frederick R. Dahilig ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Dioscoro A. Merilo

IPC分类号： H01L21/00 ,  H01L23/34

CPC分类号： H01L23/562 ,  H01L21/4871 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/3672 ,  H01L23/4334 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/32 ,  H01L24/48 ,  H01L24/95 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated.

摘要翻译： 通过将预制散热器框架安装在临时衬底上来制造半导体器件。 散热器框架包括平板上的垂直体。 将半导体管芯安装到散热器框架上用于散热。 在垂直体和半导体管芯周围沉积密封剂，同时留下露出的半导体管芯上的接触焊盘。 可以使用晶片级直接/顶栅模制工艺或晶片级膜辅助模制工艺来沉积密封剂。 在半导体管芯上形成互连结构。 互连结构包括形成在半导体管芯上的第一导电层，形成在第一导电层上的绝缘层，以及形成在第一导电层和绝缘层上的第二导电层。 去除临时衬底，将切割带施加到散热器框架，并且半导体管芯被切割。

公开(公告)号：US20120299191A1

公开(公告)日：2012-11-29

申请号：US13116328

申请日：2011-05-26

申请人： Zigmund R. Camacho

发明人： Zigmund R. Camacho

IPC分类号： H01L25/07 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24146 ,  H01L2224/245 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/821 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/1035 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01022 ,  H01L2224/19 ,  H01L2924/00 ,  H01L2224/03

摘要： A semiconductor device has a first semiconductor die and first encapsulant deposited around the first semiconductor die. A first insulating layer is formed over the first semiconductor die and first encapsulant. A first conductive layer is formed over the first insulating layer and electrically connected to a contact pad of the first semiconductor die. A second semiconductor die is mounted to the first insulating layer and first conductive layer. A second encapsulant is deposited around the second semiconductor die. A second insulating layer is formed over the second semiconductor die and second encapsulant. A second conductive layer is formed over the second insulating layer and electrically connected to a contact pad of the second semiconductor die. A plurality of conductive vias is formed continuously through the first and second encapsulants outside a footprint of the first and second semiconductor die electrically connected to the first and second conductive layers.

摘要翻译： 半导体器件具有第一半导体管芯和围绕第一半导体管芯沉积的第一密封剂。 在第一半导体管芯和第一密封剂上形成第一绝缘层。 第一导电层形成在第一绝缘层之上，并电连接到第一半导体管芯的接触焊盘。 第二半导体管芯安装到第一绝缘层和第一导电层。 第二密封剂沉积在第二半导体管芯周围。 在第二半导体管芯和第二密封剂上形成第二绝缘层。 第二导电层形成在第二绝缘层之上并电连接到第二半导体管芯的接触焊盘。 多个导电通孔连续地穿过电连接到第一和第二导电层的第一和第二半导体管芯的覆盖区之外的第一和第二密封剂形成。

公开(公告)号：US08283250B2

公开(公告)日：2012-10-09

申请号：US12332318

申请日：2008-12-10

申请人： Lionel Chien Hui Tay ,  Jianmin Fang ,  Zigmund R. Camacho

发明人： Lionel Chien Hui Tay ,  Jianmin Fang ,  Zigmund R. Camacho

IPC分类号： H01L21/20

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and outer conductive via separated by insulating material. A middle conductive via can be formed between the inner and outer conductive vias. The inner conductive via has a first cross-sectional area adjacent to a first surface of the semiconductor device and a second cross-sectional area adjacent to a second surface of the semiconductor device. The outer conductive via has a first cross-sectional area adjacent to the first surface of the semiconductor device and a second cross-sectional area adjacent to the second surface of the semiconductor device. The first cross-sectional area is different from the second cross-sectional area.

摘要翻译： 半导体器件由包含由周边区域分离的半导体管芯的半导体晶片制成。 在周边区域或通过器件的有源区域形成导电通孔结构，以提供额外的拉伸强度。 导电通孔结构包括由绝缘材料隔开的内部导电通孔和外部导电通孔。 中间导电通孔可以形成在内导电通孔和外导电通孔之间。 内部导电通孔具有与半导体器件的第一表面相邻的第一横截面区域和与半导体器件的第二表面相邻的第二横截面区域。 外导电通孔具有与半导体器件的第一表面相邻的第一横截面区域和与半导体器件的第二表面相邻的第二横截面区域。 第一截面积与第二横截面积不同。

公开(公告)号：US08039302B2

公开(公告)日：2011-10-18

申请号：US11952502

申请日：2007-12-07

申请人： Lionel Chien Hui Tay ,  Henry D. Bathan ,  Zigmund R. Camacho

发明人： Lionel Chien Hui Tay ,  Henry D. Bathan ,  Zigmund R. Camacho

IPC分类号： H01L21/00

CPC分类号： H01L23/5389 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/4951 ,  H01L23/49575 ,  H01L24/16 ,  H01L24/18 ,  H01L24/19 ,  H01L24/81 ,  H01L24/82 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/18 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2225/06524 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor package has a first semiconductor die mounted on a substrate. A conductive via is formed through the substrate. A first RDL is formed on a first surface of the substrate in electrical contact with the conductive via and the first semiconductor die. A second RDL is formed on a second surface of the substrate opposite the first surface of the substrate die in electrical contact with the conductive via. A second semiconductor die can be mounted on the substrate and electrically connected to the second RDL. Bonding pads are formed over the first and second surfaces of the substrate in electrical contact with the first and second RDLs, respectively. The bonding pads on opposite surfaces of the substrate are aligned. Solder bumps or bond wires can be formed on the bonding pads. The semiconductor packages can be stacked and electrically connected through the aligned bonding pads.

摘要翻译： 半导体封装具有安装在基板上的第一半导体管芯。 通过衬底形成导电通孔。 第一RDL形成在与导电通孔和第一半导体管芯电接触的基板的第一表面上。 第二RDL形成在与导电通孔电接触的与衬底管芯的第一表面相对的衬底的第二表面上。 第二半导体管芯可以安装在基板上并电连接到第二RDL。 接合焊盘分别形成在基板的第一和第二表面上，与第一和第二RDL电接触。 对准衬底的相对表面上的接合焊盘。 焊接凸块或接合线可以形成在焊盘上。 半导体封装可以通过对准的焊盘层叠并电连接。

公开(公告)号：US20110204512A1

公开(公告)日：2011-08-25

申请号：US13101657

申请日：2011-05-05

申请人： Zigmund R. Camacho ,  Dioscoro A. Merilo ,  Lionel Chien Hui Tay ,  Jose A. Caparas

发明人： Zigmund R. Camacho ,  Dioscoro A. Merilo ,  Lionel Chien Hui Tay ,  Jose A. Caparas

IPC分类号： H01L23/498 ,  H01L23/48

CPC分类号： H01L24/85 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L24/83 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05026 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13008 ,  H01L2224/16 ,  H01L2224/24227 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/85001 ,  H01L2224/85051 ,  H01L2224/85986 ,  H01L2224/92244 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/85186 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4554

摘要： A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip.

摘要翻译： 半导体封装包括具有模腔和凸起腔的载体条。 半导体管芯安装在载体条的模腔中。 在一个实施例中，使用管芯附着粘合剂安装半导体管芯。 在一个实施例中，第一半导体管芯的顶表面与载体带的靠近模腔的顶表面近似共面。 金属层设置在载体带上方以形成封装凸块和在封装凸块与第一半导体管芯的接触焊盘之间的电镀互连。 在第一半导体管芯和模腔的表面之间的模腔中设置底部填充材料。 钝化层设置在第一半导体管芯上并且暴露第一半导体管芯的接触焊盘。 密封剂设置在载体条上。

公开(公告)号：US20090243064A1

公开(公告)日：2009-10-01

申请号：US12060115

申请日：2008-03-31

申请人： Zigmund R. Camacho ,  Jairus Legaspi Pisigan ,  Lionel Chien Hui Tay ,  Henry D. Bathan

发明人： Zigmund R. Camacho ,  Jairus Legaspi Pisigan ,  Lionel Chien Hui Tay ,  Henry D. Bathan

IPC分类号： H01L23/28 ,  H01L21/50

CPC分类号： H01L23/3121 ,  H01L23/3128 ,  H01L23/4334 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49575 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19103 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4826

摘要： A method of manufacturing a semiconductor package involves providing a substrate having a window. The substrate may include a leadframe having half-etched leads. First and second semiconductor devices are mounted to a top surface of the substrate on either side of the window using an adhesive. A third semiconductor device is mounted to the first and second semiconductor devices using an adhesive. The third semiconductor device is disposed over the window of the substrate. A wirebond or other electrical interconnect is formed between the third semiconductor device and a contact pad formed over a bottom surface of the substrate opposite the top surface of the substrate. The wirebond or other electrical interconnect passes through the window of the substrate. An encapsulant is deposited over the first, second, and third semiconductor devices.

摘要翻译： 制造半导体封装的方法包括提供具有窗口的基板。 衬底可以包括具有半蚀刻引线的引线框架。 使用粘合剂将第一和第二半导体器件安装到窗口两侧的基板的顶表面。 使用粘合剂将第三半导体器件安装到第一和第二半导体器件。 第三半导体器件设置在衬底的窗口之上。 在第三半导体器件和形成在衬底的与衬底的顶表面相对的底表面上的接触焊盘之间形成引线接合或其它电互连。 引线键或其他电互连通过基板的窗口。 密封剂沉积在第一，第二和第三半导体器件上。

公开(公告)号：US09472427B2

公开(公告)日：2016-10-18

申请号：US13069191

申请日：2011-03-22

申请人： Henry D. Bathan ,  Zigmund R. Camacho ,  Jairus L. Pisigan

发明人： Henry D. Bathan ,  Zigmund R. Camacho ,  Jairus L. Pisigan

IPC分类号： H01L21/98 ,  H01L21/56 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49548 ,  H01L23/49575 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/97 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73257 ,  H01L2224/85005 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2224/85 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a leadframe with first and second opposing surfaces and a plurality of notched fingers. The leadframe is mounted to a carrier. A first semiconductor die is mounted over the carrier between the notched fingers. Conductive TSVs are formed through the first semiconductor die. A bond wire is formed between a first contact pad on the first semiconductor die and notched finger. The conductive TSV are electrically connected to the bond wires. An encapsulant is deposited over the first semiconductor die and notched fingers. Bumps are formed over the first surface of the leadframe. The carrier is removed and the leadframe is singulated. The leadframe and first semiconductor die is mounted to a substrate. A second semiconductor die is mounted to a second contact pad on the first semiconductor die. A third semiconductor die is mounted to the second surface of the leadframe.

摘要翻译： 半导体器件具有带有第一和第二相对表面的引线框架和多个缺口指状物。 引线框安装在承载架上。 第一半导体管芯安装在载体之间的缺口指状物之间。 导电TSV通过第一半导体管芯形成。 接合线形成在第一半导体管芯上的第一接触焊盘和切口的手指之间。 导电TSV电连接到接合线。 密封剂沉积在第一半导体管芯和缺口手指上。 凸起形成在引线框架的第一表面上。 移除载体并引导引线框架。 引线框架和第一半导体管芯安装到基板上。 第二半导体管芯安装到第一半导体管芯上的第二接触焊盘。 第三半导体管芯安装到引线框架的第二表面。

公开(公告)号：US09006031B2

公开(公告)日：2015-04-14

申请号：US13167133

申请日：2011-06-23

申请人： Zigmund R. Camacho ,  Henry D. Bathan ,  Emmanuel A. Espiritu

发明人： Zigmund R. Camacho ,  Henry D. Bathan ,  Emmanuel A. Espiritu

IPC分类号： H01L29/36 ,  H01L29/74 ,  H01L21/56 ,  H01L23/00 ,  H01L25/10

CPC分类号： H01L24/96 ,  H01L21/561 ,  H01L21/568 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/19 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2924/00 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012

摘要： A semiconductor device has a carrier with a die attach area. Recesses are formed partially through the carrier outside the die attach area. A first conductive layer is conformally applied over a surface of the carrier and into the recesses. A semiconductor die is mounted to the die attach area of the carrier. An encapsulant is deposited over the carrier and semiconductor die. The encapsulant extends into the recesses over the first conductive layer to form encapsulant bumps. The carrier is removed to expose the first conductive layer over the encapsulant bumps. A first insulating layer is formed over the semiconductor die with openings to expose contact pads of the semiconductor die. A second conductive layer is formed between the first conductive layer and the contact pads on the semiconductor die. A second insulating layer is formed over the second conductive layer and semiconductor die.

摘要翻译： 半导体器件具有带有裸片附着区域的载体。 凹槽部分地通过载体在芯片附着区域外部形成。 第一导电层保形地施加在载体的表面上并进入凹部。 将半导体管芯安装到载体的管芯附着区域。 封装剂沉积在载体和半导体管芯上。 密封剂延伸到第一导电层上的凹槽中以形成密封剂凸块。 去除载体以将第一导电层暴露在密封剂凸块之上。 在半导体管芯上形成第一绝缘层，具有开口以露出半导体管芯的接触焊盘。 在第一导电层和半导体管芯上的接触焊盘之间形成第二导电层。 在第二导电层和半导体管芯上形成第二绝缘层。